Home > Single FETs, MOSFETs >

DC DC Conversion MOSFET ElecSuper AO3402 ES N Channel with Low Gate Charge and High Avalanche Rating

Product Categories

Bridge Rectifiers [1296]
Single Bipolar Transistors [2284]
JFETs [73]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [550]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1371]
SCRs [158]
SCRs - Modules [48]
TRIACs [559]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]
Single FETs, MOSFETs [3000]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

DC DC Conversion MOSFET ElecSuper AO3402 ES N Channel with Low Gate Charge and High Avalanche Rating

Drain to Source Voltage : 30V

Current - Continuous Drain(Id) : 4.2A

RDS(on) : 40mΩ@10V

Gate Threshold Voltage (Vgs(th)) : 900mV@250uA

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 41pF

Number : 1 N-channel

Output Capacitance(Coss) : 55pF

Input Capacitance(Ciss) : 390pF

Pd - Power Dissipation : 1.4W

Gate Charge(Qg) : 4.4nC@10V

Description : N-Channel 30V 4.2A 1.4W Surface Mount SOT-23

Mfr. Part # : AO3402-ES

Model Number : AO3402-ES

Package : SOT-23

Contact Now

Product Overview

The AO3402-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and features a high-density cell design for low on-resistance, reliability, and avalanche rating.

Product Attributes

Brand: ElecSuper
Product Series: SuperMOS
Material: Halogen free
Flammability Rating: UL 94V-0
Certifications: Pb-free

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Rating & Thermal Characteristics
Drain-Source Voltage	BVDSS				30	V
Gate-Source Voltage	VGS				±12	V
Continuous Drain Current	ID	TA=25°C			4.2	A
Continuous Drain Current	ID	TA=75°C			3.3	A
Maximum Power Dissipation	PD				1.4	W
Pulsed Drain Current	IDM				15.6	A
Operating Junction Temperature	TJ				150	°C
Lead Temperature	TL				260	°C
Storage Temperature Range	Tstg		-55		150	°C
Junction-to-Ambient Thermal Resistance	RθJA	Single Operation		90		°C/W
Electrical Characteristics
Drain-to-Source Breakdown Voltage	BVDSS	VGS=0V, ID=250uA	30			V
Zero Gate Voltage Drain Current	IDSS	VDS=30V, VGS=0V			1	uA
Gate-to-source Leakage Current	IGSS	VDS=0V, VGS=±12V			±100	nA
Gate Threshold Voltage	VGS(TH)	VGS=VDS, ID=250uA	0.6	0.9	1.5	V
Drain-to-source On-resistance	RDS(on)	VGS=10V, ID=3.6A		40	51	mΩ
Drain-to-source On-resistance	RDS(on)	VGS=4.5V, ID=2A		43	54	mΩ
Drain-to-source On-resistance	RDS(on)	VGS=2.5V, ID=1A		55	69	mΩ
Forward transconductance	gfs	VDS=5V, ID=3.6A		40		S
Input Capacitance	CISS	VGS=0V, f=1MHz, VDS=15V		390		pF
Output Capacitance	COSS	VGS=0V, f=1MHz, VDS=15V		55		pF
Reverse Transfer Capacitance	CRSS	VGS=0V, f=1MHz, VDS=15V		41		pF
Total Gate Charge	QG(TOT)	VGS=10V, VDS=15V, ID=3.6A		4.4		nC
Gate-to-Source Charge	QGS	VGS=10V, VDS=15V, ID=3.6A		0.6		nC
Gate-to-Drain Charge	QGD	VGS=10V, VDS=15V, ID=3.6A		1.4		nC
Turn-On Delay Time	td(ON)	VGS=10V, VDS=15V, RL=3.5Ω, RG=6Ω		3.3		ns
Rise Time	tr	VGS=10V, VDS=15V, RL=3.5Ω, RG=6Ω		1		ns
Turn-Off Delay Time	td(OFF)	VGS=10V, VDS=15V, RL=3.5Ω, RG=6Ω		21.7		ns
Fall Time	tf	VGS=10V, VDS=15V, RL=3.5Ω, RG=6Ω		2.1		ns
Forward Voltage	VSD	VGS=0V, IS=3.6A			1.5	V

2504101957_ElecSuper-AO3402-ES_C19725090.pdf

DC DC Conversion MOSFET ElecSuper AO3402 ES N Channel with Low Gate Charge and High Avalanche Rating Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!