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Silicon Epitaxial Planar Diode KEC KDS160E-RTL P Ultra High Speed Switching with Low Forward Voltage

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Silicon Epitaxial Planar Diode KEC KDS160E-RTL P Ultra High Speed Switching with Low Forward Voltage

Non-Repetitive Peak Forward Surge Current : 2A

Reverse Leakage Current (Ir) : 500nA@80V

Reverse Recovery Time (trr) : 1.6ns

Operating Junction Temperature Range : -

Voltage - DC Reverse (Vr) (Max) : 80V

Diode Configuration : -

Pd - Power Dissipation : 150mW

Voltage - Forward(Vf@If) : 1.2V@100mA

Current - Rectified : 100mA

Description : Diode 80V 100mA ESC

Mfr. Part # : KDS160E-RTL/P

Model Number : KDS160E-RTL/P

Package : ESC

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Product Overview

The KDS160E is a silicon epitaxial planar diode designed for ultra-high-speed switching applications. It features a small ESC package, low forward voltage, fast reverse recovery time, and small total capacitance. The suffix 'U' indicates qualification to AEC-Q101 standards, making it suitable for demanding automotive applications.

Product Attributes

Type: Silicon Epitaxial Planar Diode
Application: Ultra High Speed Switching
AEC-Q101 Qualified (Suffix U)

Technical Specifications

Model	Marking	Maximum (Peak) Reverse Voltage (VRM)	Reverse Voltage (VR)	Maximum (Peak) Forward Current (IFM)	Average Forward Current (IO)	Surge Current (IFSM) (10ms)	Power Dissipation (PD)*	Junction Temperature (Tj)	Storage Temperature Range (Tstg)
KDS160E	F U	85 V	80 V	300 mA	100 mA	2 A	150 mW	150	-55150

Characteristic	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Forward Voltage	VF(1)	IF=1mA	-	0.60	-	V
Forward Voltage	VF(2)	IF=10mA	-	0.72	-	V
Forward Voltage	VF(3)	IF=100mA	-	0.90	1.20	V
Reverse Current	IR	VR=80V	-	-	0.5	A
Total Capacitance	CT	VR=0V, f=1MHz	-	0.9	3.0	pF
Reverse Recovery Time	trr	IF=10mA	-	1.6	4.0	nS

* Mounted on a glass epoxy circuit board of 2020mm, pad dimension of 44mm.

Dimension	Symbol	Millimeters
A	A	1.60 0.10
B	B	1.20 0.10
C	C	0.80 0.10
D	D	0.30 0.05
E	E	0.60 0.10
F	F	0.13 0.05
G	G	0.20 0.10

2410121747_KEC-KDS160E-RTL-P_C919692.pdf

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