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Nexperia BCP56-16TX 80 Volt NPN Medium Power Transistor 1 Amp Collector Current SOT223 Surface Mount

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Nexperia BCP56-16TX 80 Volt NPN Medium Power Transistor 1 Amp Collector Current SOT223 Surface Mount

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 600mW

Transition frequency(fT) : 155MHz

type : NPN

Number : 1 NPN

Current - Collector(Ic) : 1A

Collector - Emitter Voltage VCEO : 80V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor NPN 80V 1A 155MHz 0.6W Surface Mount SOT-223

Mfr. Part # : BCP56-16TX

Model Number : BCP56-16TX

Package : SOT-223

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Nexperia BCP56T Series: 80 V, 1 A NPN Medium Power Transistors

Product Overview
The Nexperia BCP56T series comprises NPN medium power transistors housed in a SOT223 (SC-73) surface-mounted device (SMD) plastic package. These transistors offer high collector current capability, multiple current gain selections, and robust power dissipation capabilities, making them suitable for applications such as linear voltage regulators, MOSFET drivers, high-side switches, power management, and amplifiers. The series provides reliable performance for demanding electronic designs.

Product Attributes

Brand: Nexperia
Package Type: SOT223 (SC-73)
Transistor Type: NPN Medium Power

Technical Specifications

Model	Package Type	Collector-Emitter Voltage (VCEO)	Collector Current (IC)	Peak Collector Current (ICM)	DC Current Gain (hFE)	PNP Complement
BCP56T	SOT223 (SC-73)	80 V	1 A	2 A (single pulse, tp 1 ms)	63 - 250 (VCE = 2 V; IC = 150 mA)	BCP53T
BCP56-10T	SOT223 (SC-73)	80 V	1 A	2 A (single pulse, tp 1 ms)	63 - 160 (VCE = 2 V; IC = 150 mA)	BCP53-10T
BCP56-16T	SOT223 (SC-73)	80 V	1 A	2 A (single pulse, tp 1 ms)	100 - 250 (VCE = 2 V; IC = 150 mA)	BCP53-16T

Key Features and Benefits

High collector current capability (IC and ICM)
Three current gain selections
High power dissipation capability

Applications

Linear voltage regulators
MOSFET drivers
High-side switches
Power management
Amplifiers

Limiting Values (Tamb = 25 C unless otherwise specified)

Symbol	Parameter	Conditions	Min	Max	Unit
VCBO	Collector-base voltage	open emitter	-	100	V
VCEO	Collector-emitter voltage	open base	-	80	V
VEBO	Emitter-base voltage	open collector	-	5	V
IC	Collector current	-	-	1	A
ICM	Peak collector current	single pulse; tp 1 ms	-	2	A
IB	Base current	-	-	0.2	A
IBM	Peak base current	single pulse; tp 1 ms	-	0.3	A
Ptot	Total power dissipation	Tamb 25 C [1]	-	0.6	W
		[2]	-	1	W
		[3]	-	1.3	W
		[4]	-	1.3	W
Tj	Junction temperature	-	-	150	C
Tamb	Ambient temperature	-	-55	150	C
Tstg	Storage temperature	-	-65	150	C

[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated and standard footprint.

Pinning Information

Pin	Symbol	Description
1	B	Base
2	C	Collector
3	E	Emitter
4	C	Collector

Ordering Information

Type number	Name	Description	Version
BCP56T	-	-	SC-73 plastic, surface-mounted package with increased heatsink; 4 leads SOT223
BCP56-10T	-	-	SC-73 plastic, surface-mounted package with increased heatsink; 4 leads SOT223
BCP56-16T	-	-	SC-73 plastic, surface-mounted package with increased heatsink; 4 leads SOT223

Marking

Type number	Marking code
BCP56T	BCP56T
BCP56-10T	P5610T
BCP56-16T	P5616T

2411041820_Nexperia-BCP56-16TX_C426787.pdf

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