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high current triac FUXINSEMI BT134-600E 4 amp 600 volt with shock load resistance in to 126 package

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high current triac FUXINSEMI BT134-600E 4 amp 600 volt with shock load resistance in to 126 package

Holding Current (Ih) : 15mA

Current - Gate Trigger(Igt) : 10mA

Voltage - On State(Vtm) : 1.55V

Average Gate Power Dissipation (PG(AV)) : 500mW

Current - On State(It(RMS)) : 4A

Peak off - state voltage(Vdrm) : 600V

Current - Surge(Itsm@f) : 25A@50Hz

SCR Type : -

Operating Temperature : -40℃~+125℃

Gate Trigger Voltage (Vgt) : 1.3V

Description : TRIAC 600V 4A Through Hole TO-126

Mfr. Part # : BT134-600E

Model Number : BT134-600E

Package : TO-126

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Product Overview

The BT134 Series TRIACs from Fuxin Semiconductor are 4.0A, 4-quadrant TRIACs in a TO-126 package. They offer high ability to withstand shock loading of large current and high commutation performances, making them especially recommended for use on inductive loads. Applications include washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation.

Product Attributes

Brand: Fuxin Semiconductor
Origin: FS (from www.fuxinsemi.com)
Package: TO-126

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Repetitive peak off-state voltage	VDRM	600	V
Repetitive peak off-state voltage	VDRM	800	V
Repetitive peak reverse voltage	VRRM	600	V
Repetitive peak reverse voltage	VRRM	800	V
RMS on-state current	IT(RMS)	4.0	A
Non repetitive surge peak on-state current (full cycle, F=50Hz)	ITSM	25	A
I2t value for fusing (tp=10ms)	I2t	3.1	A2s
Critical rate of rise of on-state current (IG =2IGT)	dIT/dt	50	A/s	--
Critical rate of rise of on-state current (IG =2IGT)	dIT/dt	10	A/s
Peak gate current	IGM	2	A
Average gate power dissipation	PG(AV)	0.5	W
Junction Temperature	TJ	-40 ~ +125
Storage Temperature	TSTG	-40 ~ +150
Gate trigger current	IGT	MAX. 10	mA	VD =12V, IT = 0.1A, Tj =25, --
Gate trigger current	IGT	25	mA	VD =12V, IT = 0.1A, Tj =25,
Gate trigger voltage	VGT	MAX. 1.3	V	Tj =25, ---
Gate non-trigger voltage	VGD	MIN. 0.2	V	VD =VDRM, Tj =125
Latching current	IL	MAX. 15	mA	VD =12V, IGT = 0.1A, Tj =25, --
Latching current	IL	20	mA	VD =12V, IGT = 0.1A, Tj =25,
Holding current	IH	MAX. 15	mA	Tj =25, ---
Critical-rate of rise of commutation voltage	dVD/dt	MIN. 20	V/s	VD=2/3VDRM, Gate Open, Tj =125
Forward "on" voltage	VTM	MAX. 1.55	V	ITM =6A, tp=380s
Repetitive Peak Off-State Current	IDRM	MAX. 5	A	VD =VDRM, Tj=25
Repetitive Peak Reverse Current	IRRM	MAX. 500	A	VR =VRRM, Tj=125
Junction to case thermal resistance (AC)	Rth(j-c)	TYP. 3	/W
Junction to ambient thermal resistance	Rth(j-a)	TYP. 100	/W

2112281630_FUXINSEMI-BT134-600E_C842780.pdf

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