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silicon thyristor DIODES SD1A150A with 120 volts peak repetitive off state voltage and compact SMA package

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silicon thyristor DIODES SD1A150A with 120 volts peak repetitive off state voltage and compact SMA package

Holding Current (Ih) : 60mA

Voltage - On State(Vtm) : 1.5V

Current - On State(It(RMS)) : 1A

Peak off - state voltage(Vdrm) : 120V

Current - Surge(Itsm@f) : 280A

Operating Temperature : -40℃~+125℃

Description : 60mA 120V SMA TRIACs RoHS

Mfr. Part # : SD1A150A

Model Number : SD1A150A

Package : SMA

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Product Overview

The SD1A150A(LS) is a high voltage silicon unidirectional thyristor designed for applications requiring reliable overvoltage protection. It features a breakover voltage (VBO) range of 142 to 157 Vdc and a repetitive off-state voltage (VDRM) of 120V. With a compact SMA package for space-saving designs and a low holding current (IH) under 60mA, this device is suitable for gas igniters and other high-voltage switching applications. It is also RoHS compliant and a "Green" device, free from Halogen and Antimony.

Product Attributes

Brand: Diodes Incorporated
Product Type: SIDAC HIGH VOLTAGE SILICON UNIDIRECTIONAL THYRISTORS
Package: SMA (DO-214AC)
Material: Molded plastic
Certifications: RoHS Compliant, Halogen and Antimony Free ("Green" Device)

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
MAXIMUM RATINGS
Peak repetitive off-state voltage	VDRM	120	Volts	TJ= -40 to +125C, Sine Wave, 50 to 60Hz
On-state RMS current	IT(RMS)	1	Amp	TL= 80C, all conduction angles
Peak non-repetitive surge current	ITSM	280	Amps	Ta=25C, pulse width to = 10us, f=5Hz sine wave, repetitive peak value
Maximum lead Solder Temperature	TL	260	C	Lead Length 1/16 from Case, 10s Max
Operating junction temperature range	TJ	-40 ~ +125	C
Storage temperature range	TSTG	-40 ~ +150	C
THERMAL CHARACTERISTICS
Typical thermal resistance junction to case	RthJC	15	C/W	TYP.
OFF CHARACTERISTICS
Peak repetitive forward or reverse blocking current	IDRM	10	uA	MAX, VDRM=120V (50 to 60Hz)
ON CHARACTERISTICS
Peak On-State Voltage	VTM	1.5	Volts	MAX, IT = 1A
Breakover Voltage	VBO	142 - 157	Volts	MIN/MAX, IBO = 5uA
Break over current	IBO	200	uA	MAX
Holding current	IH	60	mA	MAX
Switching resistance	RS	0.1	k	MIN
DYNAMIC CHARACTERISTICS
Critical rate of rise of on-state current	di/dt	80	A/s	TYP.

2504101957_DIODES-SD1A150A_C17342567.pdf

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