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switching MOSFET HXY MOSFET RGSX5TS65HRC11-HXY designed for UPS EV charger and solar inverter systems

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switching MOSFET HXY MOSFET RGSX5TS65HRC11-HXY designed for UPS EV charger and solar inverter systems

Pd - Power Dissipation : 330W

Td(off) : 130ns

Td(on) : 20ns

Collector-Emitter Breakdown Voltage (Vces) : 650V

Reverse Transfer Capacitance (Cres) : 23pF

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 3.2V@250uA

Gate Charge(Qg) : 104nC@15V

Operating Temperature : -40℃~+175℃

Reverse Recovery Time(trr) : 95ns

Switching Energy(Eoff) : 920uJ

Turn-On Energy (Eon) : 2.04mJ

Input Capacitance(Cies) : 2.81nF

Pulsed Current- Forward(Ifm) : 300A

Output Capacitance(Coes) : 215pF

Description : 330W 650V TO-247 Single IGBTs RoHS

Mfr. Part # : RGSX5TS65HRC11-HXY

Model Number : RGSX5TS65HRC11-HXY

Package : TO-247

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Product Overview

The RGSX5TS65HRC11 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.

Product Attributes

Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
Model: RGSX5TS65HRC11
Package: TO-247
Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Certifications: Not specified
Color: Not specified
Material: Not specified

Technical Specifications

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
VCE	Collector emitter voltage				650	V
IC	DC collector current(1)	TC = 25C			90	A
IC	DC collector current(1)	TC = 100C			75	A
ICM	Pulsed collector current	TC = 25C			300	A
IF	Maximum Diode forward current(1)	TC = 25C			90	A
IF	Maximum Diode forward current(1)	TC = 100C			75	A
IFM	Diode pulsed current	TC = 25C			300	A
VGE	Gate-Emitter voltage	TVJ = 25C			20	V
VGE	Transient Gate-Emitter Voltage	TVJ = 25C (tp 10s, D < 0.010)			30	V
Ptot	Power Dissipation	TC = 25C			330	W
Ptot	Power Dissipation	TC = 100C			160	W
TVJ	Operating Junction Temperature Range		-40		+175	C
TSTG	Storage Temperature Range		-55		+150	C
Thermal Resistance
RJA	Thermal resistance: junction - ambient			40		C/W
RJC	IGBT Thermal resistance: junction - case IGBT			0.45		C/W
RJC	Diode Thermal resistance: junction - case Diode			0.54		C/W
Electrical Characteristics
V(BR)CES	Collector - Emitter Breakdown Voltage	VGE = 0V , IC = 0.5mA	650			V
VCESAT	Collector - Emitter Saturation Voltage	VGE = 15V , IC = 75A		1.6	2.1	V
VCESAT	Collector - Emitter Saturation Voltage	VGE = 15V , IC = 75A ,TVJ = 125C		1.86		V
VCESAT	Collector - Emitter Saturation Voltage	VGE = 15V , IC = 75A ,TVJ = 175C		2.0		V
VF	Diode forward voltage	VGE = 0V , IC =75A		1.85	2.1	V
VF	Diode forward voltage	VGE = 0V , IC = 75A ,TVJ = 125C		1.55		V
VF	Diode forward voltage	VGE = 0V , IC = 75A ,TVJ = 175C		1.4		V
VGE(th)	Gate-Emitter threshold voltage	VGE = VCE, IC = 250mA	3.2	4	4.8	V
ICES	Zero Gate voltage Collector current	VCE = 650V , VGE = 0V			75	mA
IGES	Gate-Emitter leakage current	VGE = 20V , VCE = 0V			100	nA
gfs	Transconductance	VGE = 20V, IC = 75A		86		S
Dynamic Characteristics
Cies	Input Capacitance	VGE = 0V, VCE = 25V, f = 1MHz		2810		pF
Coes	Output Capacitance			215		pF
Cres	Reverse Transfer Capacitance			23		pF
Qg	Gate Charge	VGE = 0 to 15V VCE = 520V, IC = 75A		104		nC
Qge	Gate to Emitter charge			15		nC
Qgc	Gate to Collector charge			30		nC
Switching Characteristics
td(on)	Turn-On DelayTime	VGE = 15V, VCC = 400V IC= 75A, RG(off) = 8		20		ns
tr	Turn-On Rise Time			30		ns
td(off)	Turn-Off DelayTime			130		ns
tf	Turn-Off Fall Time			32		ns
Eon	Turn-on energy			2.04		mJ
Eoff	Turn-off energy			0.92		mJ
Ets	Total switching energy			2.96		mJ
Diode Recovery Characteristics
Trr	Reverse recovery time	VR = 400 V, IF = 75 A, di/dt = 800 A/S		95		ns
Qrr	Reverse recovery charge			1.87		mC
Irrm	Peak reverse recovery current			8.0		A

2509181739_HXY-MOSFET-RGSX5TS65HRC11-HXY_C49003473.pdf

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