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High voltage IGBT module HXY MOSFET NGTB30N135IHRWG-HXY 1350V 30A low saturation voltage for EV charger and UPS systems

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High voltage IGBT module HXY MOSFET NGTB30N135IHRWG-HXY 1350V 30A low saturation voltage for EV charger and UPS systems

Pd - Power Dissipation : 250W

Td(off) : 190ns

Td(on) : 51ns

Collector-Emitter Breakdown Voltage (Vces) : 1.35kV

Reverse Transfer Capacitance (Cres) : 18pF

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 5.5V@0.5mA

Gate Charge(Qg) : 120nC@15V

Operating Temperature : -40℃~+175℃

Pulsed Current- Forward(Ifm) : 90A

Output Capacitance(Coes) : 51pF

Switching Energy(Eoff) : 1.3mJ

Turn-On Energy (Eon) : 2.6mJ

Description : 250W 1.35kV TO-247 Single IGBTs RoHS

Mfr. Part # : NGTB30N135IHRWG-HXY

Model Number : NGTB30N135IHRWG-HXY

Package : TO-247

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Product Overview

The NGTB30N135IHRWG is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, it is suitable for demanding applications such as UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.

Product Attributes

Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Model: NGTB30N135IHRWG
Package: TO-247

Technical Specifications

Type	VCE (V)	IC (A)	VCE(SAT) (V)	VF (V)	Package	Packing
IGBT	1350	30	1.65 (Tvj=25C, VGE=15V, IC=30A)	1.85 (Tvj=25C, IF=30A)	TO-247	30PCS

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector emitter voltage	V(BR)CES	Tvj = 25 C	1350	-	-	V
Collector emitter saturation voltage	VCEsat	VGE = 15 V, IC =30 A, Tvj = 25 C	-	1.65	1.95	V
Collector emitter saturation voltage	VCEsat	VGE = 15 V, IC =30 A, Tvj = 175 C	-	1.95	2.25	V
Diode forward voltage	VF	VGE = 0 V, IC =30 A, Tvj = 25 C	-	1.85	2.0	V
Diode forward voltage	VF	VGE = 0 V, IC =30 A, Tvj = 175 C	-	1.95	-	V
Gate-emitter threshold voltage	VGE(th)	VCE = VGE, IC = 0.5 mA, Tvj = 25 C	5.5	6.18	6.9	V
Zero gate voltage collector current	ICES	VCE = 1350 V, VGE = 0 V, Tvj = 25 C	-	-	100	A
Gate-emitter leakage current	IGES	VGE = 20 V, VCE = 0 V, Tvj = 25 C	-	-	200	nA
Transconductance	Gfs	VGE = 15 V, Ic=20A, Tvj = 25 C	-	30	-	S
Input capacitance	Cies	VGE = 0 V, VCE = 25 V, f = 1MHz	-	3800	-	pF
Output capacitance	Coes	VGE = 0 V, VCE = 25 V, f = 1MHz	-	51	-	pF
Reverse transfer capacitance	Cres	VGE = 0 V, VCE = 25 V, f = 1MHz	-	18	-	pF
Gate charge	Qg	VGE = 0 V to 15 V, IC = 20 A, VCE = 600 V	-	120	-	nC
Gate to emitter charge	Qge	VGE = 0 V to 15 V, IC = 20 A, VCE = 600 V	-	35	-	nC
Gate to collector charge	Qgc	VGE = 0 V to 15 V, IC = 20 A, VCE = 600 V	-	51	-	nC
Turn-on delay time	td(on)	VCC = 600 V, IC =30 A, VGE = 15 V, RG(on) = 10, RG(off) = 10, Tvj = 25C	-	51	-	ns
Rise time	tr	VCC = 600 V, IC =30 A, VGE = 15 V, RG(on) = 10, RG(off) = 10, Tvj = 25C	-	52	-	ns
Turn-off delay time	td(off)	VCC = 600 V, IC =30 A, VGE = 15 V, RG(on) = 10, RG(off) = 10, Tvj = 25C	-	190	-	ns
Fall time	tf	VCC = 600 V, IC =30 A, VGE = 15 V, RG(on) = 10, RG(off) = 10, Tvj = 25C	-	152	-	ns
Turn-on energy	Eon	VCC = 600 V, IC =30 A, VGE = 15 V, RG(on) = 10, RG(off) = 10, Tvj = 25C	-	2.6	-	mJ
Turn-off energy	Eoff	VCC = 600 V, IC =30 A, VGE = 15 V, RG(on) = 10, RG(off) = 10, Tvj = 25C	-	1.3	-	mJ
Total switching energy	Ets	VCC = 600 V, IC =30 A, VGE = 15 V, RG(on) = 10, RG(off) = 10, Tvj = 25C	-	3.9	-	mJ
Reverse recovery time	trr	VR = 600 V, IF = 30 A, di/dt = 600 A/S, Tvj = 25C	-	330	-	ns
Reverse recovery charge	Qrr	VR = 600 V, IF = 30 A, di/dt = 600 A/S, Tvj = 25C	-	2.0	-	C
Peak reverse recovery current	Irrm	VR = 600 V, IF = 30 A, di/dt = 600 A/S, Tvj = 25C	-	12	-	A

Parameter	Symbol	Conditions	Value	Unit
IGBT Thermal resistance junction - case	RthJC	IGBT	0.6	C / W
IGBT Thermal resistance junction - ambient	RthJA	IGBT	40	C / W

Parameter	Symbol	Conditions	Value	Unit
DC collector current	IC	TC = 25 C	60	A
DC collector current	IC	TC = 100 C	30	A
Pulsed collector current	ICM	TC = 25 C	90	A
Maximum Diode forward current	IF	TC = 25 C	60	A
Maximum Diode forward current	IF	TC = 100 C	30	A
Diode pulsed current	IFM	TC = 25 C	90	A
Gate source voltage	VGE	Tvj = 25 C	20	V
Transient Gate-Emitter Voltage	VGE	(tp 10s, D < 0.010)	30	V
Power dissipation	Ptot	TC = 25 C	250	W
Power dissipation	Ptot	TC = 100 C	125	W
Operating Junction Temperature Range	Tvj	-	-40 to +175	C
Storage Temperature Range	Tstg	-	-55 to +150	C

2509181737_HXY-MOSFET-NGTB30N135IHRWG-HXY_C49003400.pdf

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