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600V IGBT Infineon IKA06N60T with soft fast recovery emitter controlled diode and high ruggedness

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600V IGBT Infineon IKA06N60T with soft fast recovery emitter controlled diode and high ruggedness

Pd - Power Dissipation : 28W

Td(off) : 130ns

Td(on) : 9.4ns

Collector-Emitter Breakdown Voltage (Vces) : 600V

Reverse Transfer Capacitance (Cres) : 11pF

IGBT Type : FS (Field Stop)

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 4.1V@0.18mA

Gate Charge(Qg) : 42nC@15V

Operating Temperature : -40℃~+175℃

Reverse Recovery Time(trr) : 123ns

Switching Energy(Eoff) : 110uJ

Turn-On Energy (Eon) : 90uJ

Input Capacitance(Cies) : 368pF

Pulsed Current- Forward(Ifm) : 18A

Output Capacitance(Coes) : 28pF

Description : 28W 600V FS (Field Stop) TO-220FP Single IGBTs RoHS

Mfr. Part # : IKA06N60T

Model Number : IKA06N60T

Package : TO-220FP

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Product Overview

The IKA06N60T is a high-performance IGBT from Infineon's TRENCHSTOP Series, featuring Fieldstop technology and a soft, fast-recovery Emitter Controlled HE diode. Designed for 600V applications, it offers very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. Its advanced technology ensures tight parameter distribution, high ruggedness, temperature-stable behavior, and very high switching speeds with low EMI. This product is qualified according to JEDEC standards and is Pb-free and RoHS compliant.

Product Attributes

Brand: Infineon
Series: TRENCHSTOP
Technology: TRENCHSTOP and Fieldstop
Diode Type: Emitter Controlled HE
Certifications: JEDEC, RoHS compliant
Lead Plating: Pb-free

Technical Specifications

Type	VCE	IC	VCE(sat),Tj=25C	Tj,max	Marking	Package
IKA06N60T	600V	6A	1.5V	175C	K06T60	PG-TO220-3 (FullPAK)

Parameter	Symbol	Conditions	Value	Unit
Collector-emitter voltage	VCE	Tj 25C	600	V
DC collector current	IC	TC = 25C	10	A
DC collector current	IC	TC = 100C	6.2	A
Pulsed collector current	ICpuls	tp limited by Tjmax	18	A
Diode forward current	IF	TC = 25C	10.2	A
Diode forward current	IF	TC = 100C	6.5	A
Diode pulsed current	IFpuls	tp limited by Tjmax	18	A
Gate-emitter voltage	VGE		20	V
Short circuit withstand time	tSC	VGE = 15V, VCC 400V, Tj 150C	5	s
Power dissipation	Ptot	TC = 25C	28	W
Operating junction temperature	Tj		-40...+175	C
Storage temperature	Tstg		-55...+150	C
Isolation voltage	Visol		2500	Vrms
IGBT thermal resistance, junction case	RthJC		5.3	K/W
Diode thermal resistance, junction case	RthJCD		6.5	K/W
Thermal resistance, junction ambient	RthJA		80	K/W
Collector-emitter breakdown voltage	V(BR)CES	VGE=0V, IC=0.25mA	600	V
Collector-emitter saturation voltage	VCE(sat)	VGE = 15V, IC=6A, Tj=25C	1.5	V
Collector-emitter saturation voltage	VCE(sat)	VGE = 15V, IC=6A, Tj=175C	1.8	V
Diode forward voltage	VF	VGE=0V, IF=6A, Tj=25C	1.6	V
Diode forward voltage	VF	VGE=0V, IF=6A, Tj=175C	1.6	V
Gate-emitter threshold voltage	VGE(th)	IC=0.18mA, VCE=VGE	4.1	V
Zero gate voltage collector current	ICEs	VCE=600V,VGE=0V, Tj=25C	40	A
Zero gate voltage collector current	ICEs	VCE=600V,VGE=0V, Tj=175C	700	A
Gate-emitter leakage current	IGEs	VCE=0V,VGE=20V	100	nA
Transconductance	gfs	VCE=20V, IC=6A	3.6	S
Input capacitance	Ciss	VCE=25V, VGE=0V, f=1MHz	368	pF
Output capacitance	Coss		28	pF
Reverse transfer capacitance	Crss		11	pF
Gate charge	Qg	VCC=480V, IC=6A, VGE=15V	42	nC
Internal emitter inductance	LE	measured 5mm from case	7	nH
Short circuit collector current	IC(SC)	VGE=15V,tSC5s, VCC = 400V, Tj = 25C	55	A
Turn-on delay time	td(on)	Tj=25C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF	9.4	ns
Rise time	tr		5.6	ns
Turn-off delay time	td(off)		130	ns
Fall time	tf		58	ns
Turn-on energy	Eon		0.09	mJ
Turn-off energy	Eoff		0.11	mJ
Total switching energy	Ets		0.2	mJ
Diode reverse recovery time	trr	Tj=25C, VR=400V, IF=6A, diF/dt=550A/s	123	ns
Diode reverse recovery charge	Qrr		190	nC
Diode peak reverse recovery current	Irr		5.3	A
Diode peak rate of fall of reverse recovery current	dirr/dt		450	A/s
Turn-on delay time	td(on)	Tj=175C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF	8.8	ns
Rise time	tr		8.2	ns
Turn-off delay time	td(off)		165	ns
Fall time	tf		84	ns
Turn-on energy	Eon		0.14	mJ
Turn-off energy	Eoff		0.18	mJ
Total switching energy	Ets		0.335	mJ
Diode reverse recovery time	trr	Tj=175C, VR=400V, IF=6A, diF/dt=550A/s	180	ns
Diode reverse recovery charge	Qrr		500	nC
Diode peak reverse recovery current	Irr		7.6	A
Diode peak rate of fall of reverse recovery current	dirr/dt		285	A/s

2410121538_Infineon-IKA06N60T_C536133.pdf

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