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Durable Industrial IGBT HXY MOSFET IKW60N60H3-HXY Featuring RoHS Compliance and TO-247 Package Design

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Durable Industrial IGBT HXY MOSFET IKW60N60H3-HXY Featuring RoHS Compliance and TO-247 Package Design

Pd - Power Dissipation : 250W

Td(off) : 124ns

Td(on) : 24ns

Collector-Emitter Breakdown Voltage (Vces) : 650V

Reverse Transfer Capacitance (Cres) : 93pF

IGBT Type : FS (Field Stop)

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 4.3V@1mA

Gate Charge(Qg) : 183nC@15V

Reverse Recovery Time(trr) : 136ns

Switching Energy(Eoff) : 1.2mJ

Turn-On Energy (Eon) : 1.4mJ

Input Capacitance(Cies) : 3.356nF

Pulsed Current- Forward(Ifm) : 200A

Output Capacitance(Coes) : 179pF

Description : 250W 650V FS (Field Stop) TO-247 Single IGBTs RoHS

Mfr. Part # : IKW60N60H3-HXY

Model Number : IKW60N60H3-HXY

Package : TO-247

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Product Overview

The IKW60N60H3 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring efficient power handling and fast switching capabilities.

Product Attributes

Brand: HUAXUANYANG
Manufacturer: HUAXUANYANG HXY ELECTRONICS CO.,LTD
Model: IKW60N60H3
Technology: Trench and Field Stop (T-FS)
Certifications: Halogen Free, Green Devices Available, RoHS Compliant
Package Type: TO-247
Unit Quantity: 30 (Tube)
Website: www.hxymos.com

Technical Specifications

Parameter	Test Conditions	Value	Unit	Min.	Typ.	Max.
VCES	Collector-Emitter Voltage	650	V
	Collector-Emitter Breakdown Voltage	VGE =0V, IC=1mA	650	V


IC	Collector Current @TC=25C	100	A
IC	Collector Current @TC=100C	60	A
ICM	Pulsed Collector Current, tp limited by TJmax	200	A
IF	Diode Continuous Forward Current @TC=25C	100	A
IF	Diode Continuous Forward Current @TC=100C	60	A
IFM	Diode Maximum Forward Current, limited by TJmax	200	A
VGES	Gate-Emitter Voltage	30	V
tSC	Short circuit withstand time VGE=15V, VCC400V, allowed number of short circuits<1000,times between short circuits1.0s,TJ175C	8	s
PD	Power Dissipation @TC=25C	250	W
TJmax, Tstg	Operating Junction and Storage Temperature Range	55 to 175
TL	Maximum Temperature for Soldering	260
RJC	Junction-to-Case (IGBT)	0.60	/W
RJC	Junction-to-Case (Diode)	0.55	/W
RJA	Junction-to-Ambient	40	/W
VCE(sat)	Collector-Emitter Saturation Voltage	VGE =15V, IC =60A, TJ=25	1.65	V
		VGE =15V, IC =60A, TJ=125	1.85	V
		VGE =15V, IC =60A, TJ=175	2.00	V
VF	Diode Forward Voltage	IF=50A, TJ=25	1.65	V			2.05
		IF=50A, TJ=125	1.57	V
		IF=50A, TJ=175	1.47	V
ICES	Collector-Emitter Leakage Current	VCE=650V, VGE=0V				10	A
IGES(F)	Gate-Emitter Forward Leakage Current	VGE=+20V				200	nA
IGES(R)	Gate-Emitter Reverse Leakage Current	VGE=-20V				-200	nA
td(on)	Turn-on Delay Time	IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25		24		ns
		IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175		30		ns

tr	Rise Time	IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25		88		ns
		IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175		95		ns

td(off)	Turn-Off Delay Time	IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25		124		ns
		IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175		152		ns

tf	Fall Time	IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25		73		ns
		IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175		67		ns

Eon	Turn-On Switching Loss	IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25		1.40		mJ
		IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175		1.62		mJ

Eoff	Turn-Off Switching Loss	IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25		1.20		mJ
		IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175		1.50		mJ

Ets	Total Switching Loss	IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25		2.60		mJ
		IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175		3.12		mJ

Trr	Reverse Recovery Time	IF=60A, VCC=400V, di/dt=200A/s, TJ=25		136		ns
		IF=60A, VCC=400V, di/dt=200A/s, TJ=175		183		ns

Qrr	Reverse Recovery Charge	IF=60A, VCC=400V, di/dt=200A/s, TJ=25		350		nC
		IF=60A, VCC=400V, di/dt=200A/s, TJ=175		560		nC

Irrm	Reverse Recovery Current	IF=60A, VCC=400V, di/dt=200A/s, TJ=25		6.9		A
		IF=60A, VCC=400V, di/dt=200A/s, TJ=175		7.8		A

2509181738_HXY-MOSFET-IKW60N60H3-HXY_C49003414.pdf

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