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High power IGBT module YANGJIE MG200HF12TLC2 with trench technology and high short circuit capability

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High power IGBT module YANGJIE MG200HF12TLC2 with trench technology and high short circuit capability

Pd - Power Dissipation : 1.25kW

Td(off) : 266ns

Td(on) : 187ns

Operating Temperature : -40℃~+150℃

Collector-Emitter Breakdown Voltage (Vces) : 1.2kV

Reverse Transfer Capacitance (Cres) : 0.5nF

Input Capacitance(Cies) : 12.8nF

IGBT Type : IGBT Module

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 5V@7.6mA

Gate Charge(Qg) : 1.2uC

Pulsed Current- Forward(Ifm) : 400A

Switching Energy(Eoff) : 12.9mJ

Turn-On Energy (Eon) : 21.1mJ

Description : 1.25kW 1.2kV IGBT Module Single IGBTs RoHS

Mfr. Part # : MG200HF12TLC2

Model Number : MG200HF12TLC2

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Product Overview

The MG200HF12TLC2 S-M400 is a high-performance IGBT module designed for demanding industrial applications. It features low VCE(sat) with Trench technology, positive temperature coefficient for VCE(sat), and high short circuit capability. Integrated with an ultra-fast and soft recovery anti-parallel FWD, this module offers low inductance and a maximum junction temperature of 175. It is ideal for motor drive inverters, AC/DC servo drive amplifiers, Uninterruptible Power Supplies (UPS), and soft switching welding machines.

Product Attributes

Brand: Yangjie
Certifications: RoHS Compliant

Technical Specifications

Parameter	Symbol	Conditions	Value Unit	Min.	Typ.	Max.
IGBT Absolute Maximum Ratings
Collector-Emitter Voltage	VCES	VGE=0V, IC=1mA, Tvj=25	1200 V
Continuous Collector Current	IC	TC=100	200 A
Repetitive Peak Collector Current	ICRM	tp=1ms	400 A
Gate-Emitter Voltage	VGES	Tvj=25	±20 V
Total Power Dissipation	Ptot	TC=25, Tvjmax=175	1250 W
IGBT Characteristic Values
Gate-Emitter Threshold Voltage	VGE(th)	VGE=VCE, IC=7.6mA,Tvj=25	V	5.0	5.8	6.5
Collector-Emitter Cut-off Current	ICES	VCE=1200V,VGE=0V,Tvj=25	mA			1.0
Collector-Emitter Saturation Voltage	VCE(sat)	IC=200A,VGE=15V, Tvj=25	V		1.90	2.20
Collector-Emitter Saturation Voltage	VCE(sat)	IC=200A,VGE=15V, Tvj=125	V			2.20
Collector-Emitter Saturation Voltage	VCE(sat)	IC=200A,VGE=15V, Tvj=150	V			2.30
Gate Charge	QG		uC		1.2
Internal Gate Resistor	RGint		Ω		3.8
Input Capacitance	Cies	VCE=25V,VGE=0V, f=1MHz,Tvj=25	nF		12.8
Reverse Transfer Capacitance	Cres		nF		0.5
Gate-Emitter leakage current	IGES	VCE=0V, VGE=20V,Tvj=25	nA			400
Turn-on Delay Time	td(on)	IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=25	ns		187
Rise Time	tr	IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=25	ns		62
Turn-off Delay Time	td(off)	IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=25	ns		266
Fall Time	tf	IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=25	ns		179
Energy Dissipation During Turn-on Time	Eon	IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=25	mJ		21.1
Energy Dissipation During Turn-off Time	Eoff	IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=25	mJ		12.9
Turn-on Delay Time	td(on)	IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=150	ns		192
Rise Time	tr	IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=150	ns		71
Turn-off Delay Time	td(off)	IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=150	ns		311
Fall Time	tf	IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=150	ns		265
Energy Dissipation During Turn-on Time	Eon	IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=150	mJ		32.7
Energy Dissipation During Turn-off Time	Eoff	IC=200A, VCE=600V, VGE =±15V, RG=3.6Ω, Tvj=150	mJ		17.8
SC Data	Isc	tp≤10us,VGE=15V, Tvj=150,VCC=600V, VCEM≤1200V	A			800
Diode Absolute Maximum Ratings
Repetitive Peak Reverse Voltage	VRRM	Tvj=25	1200 V
Continuous DC Forward Current	IF		200 A
Repetitive Peak Forward Current	IFRM	tp=1ms	400 A
Diode Characteristic Values
Forward Voltage	VF	IF=200A,Tvj=25	V		2.00	2.80
Forward Voltage	VF	IF=200A,Tvj=125	V		1.85
Forward Voltage	VF	IF=200A,Tvj=150	V		1.80
Recovered Charge	Qrr	IF=200A, VR=600V, -diF/dt =2400A/us, Tvj=25	uC		13.0
Peak Reverse Recovery Current	Irr	IF=200A, VR=600V, -diF/dt =2400A/us, Tvj=25	A		86
Reverse Recovery Energy	Erec	IF=200A, VR=600V, -diF/dt =2400A/us, Tvj=25	mJ		3.9
Recovered Charge	Qrr	IF=200A, VR=600V, -diF/dt =2400A/us, Tvj=150	uC		39.2
Peak Reverse Recovery Current	Irr	IF=200A, VR=600V, -diF/dt =2400A/us, Tvj=150	A		137
Reverse Recovery Energy	Erec	IF=200A, VR=600V, -diF/dt =2400A/us, Tvj=150	mJ		13.1
Module Characteristics
Isolation Voltage	Visol	t=1min,f=50Hz	V		2500
Maximum Junction Temperature	Tjmax					175
Operating Junction Temperature	Tvj op			-40		150
Storage Temperature	Tstg			-40		125
Thermal Resistance Junction to Case	RθJC	per IGBT	K/W		0.12
Thermal Resistance Junction to Case	RθJC	per Diode	K/W		0.20
Thermal Resistance Case to Sink	RθCS	Conductive grease applied	K/W		0.012	0.035
Comparative Tracking Index	CTI				400
Module Electrodes Torque	Mt	Recommended(M6)	N·m		3.0	5.0
Module-to-Sink Torque	Ms	Recommended(M6)	N·m		3.0	5.0
Weight of Module	G		g			315

2508211052_YANGJIE-MG200HF12TLC2_C2942694.pdf

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