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IGBT Module MG35P12P3 S M323 Featuring Low VCEsat and Fast Soft Recovery Diode for Power Electronics

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IGBT Module MG35P12P3 S M323 Featuring Low VCEsat and Fast Soft Recovery Diode for Power Electronics

Description : Single IGBTs RoHS

Mfr. Part # : MG35P12P3

Model Number : MG35P12P3

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MG35P12P3 S-M323 IGBT Module

The MG35P12P3 S-M323 is a high-performance IGBT module designed for various power electronics applications. It features low switching losses, low VCE(sat) with a positive temperature coefficient, and includes a fast and soft recovery anti-parallel FWD. Its low inductance case and high short circuit capability make it suitable for demanding environments. The module utilizes isolated heatsink technology (DBC) for improved thermal management and can operate at a maximum junction temperature of 175.

Product Attributes

Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
Certifications: RoHS Compliant

Technical Specifications

Part Number	Application	VCES (V)	IC (A)	VCE(sat) Max (V) @ 35A, 15V, 25C	Ptot Max (W) @ 25C	Tjmax (C)	RJC per IGBT-inverter (K/W)	RJC per Diode-inverter (K/W)	RJC per IGBT-brake-chopper (K/W)	RJC per Diode-chopper (K/W)	RJC per Diode-rectifier (K/W)
MG35P12P3 S-M323	IGBT-inverter	1200	35	2.50	210	175	0.70	1.30	0.70	1.80	1.35
MG35P12P3 S-M323	Diode-inverter	1200	35	-	-	175	0.70	1.30	0.70	1.80	1.35
MG35P12P3 S-M323	IGBT-brake-chopper	1200	35	2.50	210	175	0.70	1.30	0.70	1.80	1.35
MG35P12P3 S-M323	Diode-brake-chopper	1200	15	-	-	175	0.70	1.30	0.70	1.80	1.35
MG35P12P3 S-M323	Diode-rectifier	1600	35 (Avg)	-	-	175	0.70	1.30	0.70	1.80	1.35

2512011028_YANGJIE-MG35P12P3_C2942702.pdf

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