| Features |
| VCE(sat) | VCE(sat) | 1.55 (typ.) | V | VGE=15V, Tvj=25C |
| Applications |
| Solar Inverters | |
| Uninterrupted Power Supply | |
| Industrial Inductive Heating | |
| Energy Storage | |
| Pin Configuration (TO-247) |
| Pin 1 | G | |
| Pin 2 | C | |
| Pin 3 | E | |
| Maximum Ratings |
| Collector-emitter voltage | VCE | 1200 | V | Tvj25C |
| DC collector current (limited by Tvjmax) | IC | 155 | A | TC=25C |
| DC collector current (limited by Tvjmax) | IC | 100 | A | TC=100C |
| Pulsed collector current (tp limited by Tvjmax) | ICpuls | 300 | A | |
| Diode forward current (limited by Tvjmax) | IF | 112 | A | TC=25C |
| Diode forward current (limited by Tvjmax) | IF | 75 | A | TC=100C |
| Diode pulsed current (tp limited by Tvjmax) | IFpuls | 300 | A | |
| Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage | VGE | 30 | V | |
| Short circuit withstand time | tSC | TBD | s | VGE=15.0V, VCC400V, Tvj=150C |
| Power dissipation | Ptot | 625 | W | TC=25C |
| Operating junction temperature | Tvj(0P) | -40 to +175 | C | |
| Storage temperature | Tstg | -40 to +150 | C | |
| Soldering temperature (wave soldering, 1.6mm from case for 10s) | | 260 | C | |
| Mounting torque (M3 screw) | | Maximum of 3 | Nm | |
| Thermal Characteristics |
| IGBT Thermal Resistance, Junction-Case | R(J-C) | 0.24 | C/W | |
| Diode Thermal Resistance, Junction-Case | R(J-C) | 0.45 | C/W | |
| Thermal Resistance, Junction-to-Ambient | R(J-A) | 40 | C/W | |
| Electrical Characteristics (Tvj=25C, unless otherwise specified) |
| Collector-emitter breakdown voltage | V(BR)CES | 1200 | V | VGE=0V, IC=250A |
| Collector-emitter breakdown voltage | V(BR)CES | 1200 | V | VGE=0V, IC=1mA |
| Collector-emitter saturation voltage | VCEsat | 1.55 (Typ.), 1.9 (Max.) | V | VGE=15V, IC=75A, Tvj=25C |
| Collector-emitter saturation voltage | VCEsat | 2.0 (Typ.) | V | VGE=15V, IC=75A, Tvj=175C |
| Diode forward voltage | VF | 2.44 (Typ.), 2.9 (Max.) | V | VGE=0V, IF=75A, Tvj=25C |
| Diode forward voltage | VF | 2.1 (Typ.) | V | VGE=0V, IF=75A, Tvj=175C |
| Gate-emitter threshold voltage | VGE(th) | 4.2 (Min.), 5.2 (Typ.), 6.2 (Max.) | V | VCE=VGE, IC=250A |
| Zero gate voltage collector current | ICES | 10 (Max.) | uA | VCE=1200V, VGE=0V, Tvj=25C |
| Zero gate voltage collector current | ICES | 5000 (Max.) | uA | VCE=1200V, VGE=0V, Tvj=175C |
| Gate-emitter leakage current | IGES | 100 (Max.) | nA | VCE=0V, VGE=20V |
| Transconductance | gfs | TBC | S | VCE=20V, IC=75A |
| Dynamic Characteristic (Tvj=25C, unless otherwise specified) |
| Input capacitance | Cies | 8200 (Typ.) | pF | VCE=30V, VGE=0V, f=1MHZ |
| Output capacitance | Coes | 260 (Typ.) | pF | |
| Reverse transfer capacitance | Cres | 150 (Typ.) | pF | |
| Gate charge | QG | 402 (Typ.) | nC | VCC=600V, IC=75A, VGE=15V |
| IGBT Characteristic, at Tvj=25C |
| Turn-on delay time | td(on) | 50 (Typ.) | nS | VCC=400V, IC=60A, VGE=0.0/15V, Rg=4 |
| Rise time | tr | 45 (Typ.) | nS | |
| Turn-off delay time | td(off) | 400 (Typ.) | nS | |
| Fall time | tf | 65 (Typ.) | nS | |
| Turn-on energy | Eon | 5.2 (Typ.) | mJ | |
| Turn-off energy | Eoff | 2.2 (Typ.) | mJ | |
| Total switching energy | Ets | 7.5 (Typ.) | mJ | |
| Diode Characteristics |
| Diode reverse recovery time | trr | 170 (Typ.) | nS | IF=40A, VR=300V, di/dt= 600A/s |
| Diode reverse recovery charge | Qrr | 3.2 (Typ.) | C | |
| Diode peak reverse recovery current | Irrm | 45 (Typ.) | A | |
| Diode peak rate of fall of reverse recovery current during tb | dirr/dt | TBC | A/s | |
