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Durable JSCJ MCF600N120S2E3 IGBT module ideal for motor drivers solar inverters and UPS applications

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Durable JSCJ MCF600N120S2E3 IGBT module ideal for motor drivers solar inverters and UPS applications

Pd - Power Dissipation : 3.95kW

Td(off) : 625ns

Td(on) : 435ns

Collector-Emitter Breakdown Voltage (Vces) : 1.2kV

Reverse Transfer Capacitance (Cres) : 1.47nF

Input Capacitance(Cies) : 128nF

IGBT Type : FS (Field Stop)

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 5.2V@23mA

Gate Charge(Qg) : 7.4uC

Operating Temperature : -40℃~+150℃

Pulsed Current- Forward(Ifm) : 1200A

Switching Energy(Eoff) : 35mJ

Turn-On Energy (Eon) : 55mJ

Description : 3.95kW 1.2kV FS (Field Stop) E3 Single IGBTs RoHS

Mfr. Part # : MCF600N120S2E3

Model Number : MCF600N120S2E3

Package : E3

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Product Overview

The JIANGSUCHANGJING ELECTRONICS TECHNOLOGY CO., LTD MCF600N120S2E3 module features advanced Trench and FS (Field Stop) IGBT technology, offering very low Collector-Emitter Saturation Voltage. It is designed for ease of use in drives and inverters, providing high reliability, high short circuit capability, and low switching loss. Applications include Solar Inverters, Uninterrupted Power Supplies, Servo Drivers, and Motor Drivers.

Product Attributes

Brand: JIANGSUCHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Model: MCF600N120S2E3
Origin: China
Package Marking: E3

Technical Specifications

Parameter	Symbol	Condition	Value	Units
Absolute Maximum Ratings
Collector-Emitter Voltage	VCES		1200	V
Gate-Emitter Voltage	VGES		±20	V
DC Collector Current	IC	Tc=100	600	A
Peak Collector Current	ICM	tp=1ms	1200	A
Continuous Diode Forward Current	IF		600	A
Diode Peak Forward Current	IFRM	tp=1ms	1200	A
IGBT Maximum Power Dissipation	PD		3950	W
IGBT Short Circuit Withstand Time	tsc		10	μs
Maximum Junction Temperature	TvJ MAX		175
Operating Junction Temperature	TvJ		-40 to 150
Storage Temperature	TSTG		-40 to 125
Maximum lead temperature for soldering	TL		260
Electrical Characteristics
Collector-Emitter Saturation Voltage	VCE(sat)	IC=600A, Tvj=25	1.75 - 2.15	V
Collector-Emitter Saturation Voltage	VCE(sat)	IC=600A, Tvj=125	2.20	V
Collector-Emitter Saturation Voltage	VCE(sat)	IC=600A, Tvj=150	2.25	V
Gate-Emitter Threshold Voltage	VGE(th)	IC=23mA, VCE=VGE	5.20 - 6.40	V
Collector-Emitter Cut-off Current	ICES	VCE=1200V, VGE=0V	1	mA
Gate-Emitter Leakage Current	IGES	VCE=0V, VGE=±20V	-100 - 100	nA
Internal Gate Resistance	RGint	Tvj=25	1.20	Ω
Gate Charge	QG	VGE=-15V~+15V	7.4	μC
Input Capacitance	Cies	VCE=25V, VGE=0V, f=1MHz	128	nF
Reverse Transfer Capacitance	Cres		1.47	nF
Turn-on Delay Time	td(on)	IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=25	435	ns
Turn-on Delay Time	td(on)	IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=125	450	ns
Turn-on Delay Time	td(on)	IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=150	450	ns
Rise Time	tr	IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=25	115	ns
Rise Time	tr	IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=125	160	ns
Rise Time	tr	IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=150	170	ns
Turn-off Delay Time	td(off)	IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=25	625	ns
Turn-off Delay Time	td(off)	IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=125	680	ns
Turn-off Delay Time	td(off)	IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=150	700	ns
Fall Time	tf	IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=25	90	ns
Fall Time	tf	IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=125	200	ns
Fall Time	tf	IC=600A, VCE=600V, VGE=±15V, RGon=1.5Ω, RGoff=1.5Ω, Inductive Load, Tvj=150	235	ns
Turn-on Energy Loss	Eon	IC=600A, VCE=600V, VGE=±15V, RG=1.5Ω, Tvj=25	55	mJ
Turn-on Energy Loss	Eon	IC=600A, VCE=600V, VGE=±15V, RG=1.5Ω, Tvj=125	100	mJ
Turn-on Energy Loss	Eon	IC=600A, VCE=600V, VGE=±15V, RG=1.5Ω, Tvj=150	110	mJ
Turn-off Energy Loss	Eoff	IC=600A, VCE=600V, VGE=±15V, RG=1.5Ω, Tvj=25	35	mJ
Turn-off Energy Loss	Eoff	IC=600A, VCE=600V, VGE=±15V, RG=1.5Ω, Tvj=125	50	mJ
Turn-off Energy Loss	Eoff	IC=600A, VCE=600V, VGE=±15V, RG=1.5Ω, Tvj=150	60	mJ
Short Circuit Current	ISC	VGE≤15V, tp≤10us, VCC=800V, Tvj=150	2650	A
Diode Electrical Characteristics
Forward Voltage	VF	IF=600A, Tvj=25	1.75 - 2.15	V
Forward Voltage	VF	IF=600A, Tvj=125	1.90	V
Forward Voltage	VF	IF=600A, Tvj=150	1.90	V
Reverse Recovery Current	Irr	IF=600A, VR=600V, VGE=-15V, diF/dt=-2700A/μs (Tvj=150), Tvj=25	460	A
Reverse Recovery Current	Irr	IF=600A, VR=600V, VGE=-15V, diF/dt=-2700A/μs (Tvj=150), Tvj=125	450	A
Reverse Recovery Current	Irr	IF=600A, VR=600V, VGE=-15V, diF/dt=-2700A/μs (Tvj=150), Tvj=150	445	A
Reverse Recovery Charge	Qrr	Tvj=25	50	μC
Reverse Recovery Charge	Qrr	Tvj=125	95	μC
Reverse Recovery Charge	Qrr	Tvj=150	105	μC
Reverse Recovery Energy Loss	Erec	Tvj=25	12	mJ
Reverse Recovery Energy Loss	Erec	Tvj=125	25	mJ
Reverse Recovery Energy Loss	Erec	Tvj=150	30	mJ
NTC-Thermistor
Rated resistance	R25	Tc=25	5.00	KΩ
Power dissipation	P25		10	mW
B-value	B25/50	R2=R25exp[B25/50(1/T2-1/(298,15K))]	3375	K
Package Properties
IGBT Thermal Resistance: Junction to Case	Rth(J-C)	per IGBT	0.038	K/W
Diode Thermal Resistance: Junction to Case	Rth(J-C)	per Diode	0.063	K/W
IGBT Thermal Resistance: Case to Heatsink	Rth(C-H)	per IGBT, λgrease=1W/(m•K)	0.029	K/W
Diode Thermal Resistance: Case to Heatsink	Rth(C-H)	per Diode, λgrease=1W/(m•K)	0.048	K/W
Isolation Voltage	Visol	RMS, f=50Hz, t=60s	3.4	V
Creepage Distance	dcr	Terminal to Heatsink	14	mm
Creepage Distance	dcr	Terminal to Terminal	13.5	mm
Clearance Distance	dcl	Terminal to Heatsink	12.5	mm
Clearance Distance	dcl	Terminal to Terminal	10	mm
Comparative Tracking Index	CTI		>200
Module Stray Inductance	Ls	CE per Switch	20	nH
Module lead Resistance	RCC`+EE`	Terminal to Chip per Switch, TC=25	1.1	mΩ
Mounting Torques	M	Baseplate to Heatsink, M5	3 - 6	Nm
Mounting Torques	M	Power Terminal, M6	3 - 6	Nm
Module Weight	G		350	g

2411121056_JSCJ-MCF600N120S2E3_C22392038.pdf

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