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TO220F Package 650V IGBT MagnaChip Semicon MBF15T65PEHTH Ideal for Inverter and Motor Control Systems

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TO220F Package 650V IGBT MagnaChip Semicon MBF15T65PEHTH Ideal for Inverter and Motor Control Systems

Pd - Power Dissipation : 48W

Td(off) : 128ns

Td(on) : 19ns

Collector-Emitter Breakdown Voltage (Vces) : 650V

Reverse Transfer Capacitance (Cres) : 31pF

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 4.5V@0.5mA

Gate Charge(Qg) : 61nC@15V

Operating Temperature : -40℃~+175℃

Reverse Recovery Time(trr) : 207ns

Switching Energy(Eoff) : 86uJ

Turn-On Energy (Eon) : 270uJ

Input Capacitance(Cies) : 1.129nF

Pulsed Current- Forward(Ifm) : 60A

Output Capacitance(Coes) : 57pF

Description : 48W 650V TO-220F Single IGBTs RoHS

Mfr. Part # : MBF15T65PEHTH

Model Number : MBF15T65PEHTH

Package : TO-220F

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Product Overview

The MBF15T65PEH is a 650V Field Stop Trench IGBT from Magnachip Semiconductor, engineered for high performance, excellent quality, and superior ruggedness. Leveraging advanced Field Stop Trench IGBT Technology, this device offers high ruggedness specifically for motor control applications. Key features include a positive temperature coefficient for VCE(sat), a very soft and fast recovery anti-parallel diode, low EMI emissions, and a maximum junction temperature of 175C. It is ideal for use in inverters for motor control.

Product Attributes

Brand: Magnachip Semiconductor Ltd.
Technology: Field Stop Trench IGBT
Package Type: TO-220F
Certifications: Halogen Free
Date of Issue: July 2021
Version: 1.2

Technical Specifications

Parameter	Symbol	Conditions	Rating	Unit
Maximum Ratings
Collector-emitter voltage	VCE	-	650	V
DC collector current, limited by Tvjmax	IC	TC=25C	30	A
DC collector current, limited by Tvjmax	IC	TC=100C	15	A
Pulsed collector current, tp limited by Tvjmax	ICpuls	-	60	A
Diode forward current, limited by Tvjmax	IF	TC=25C	30	A
Diode forward current, limited by Tvjmax	IF	TC=100C	15	A
Diode pulsed current, tp limited by Tvjmax	IFpuls	-	60	A
Gate-emitter voltage	VGE	-	20	V
Power dissipation	PD	TC=25C	48	W
Power dissipation	PD	TC=100C	24	W
Short circuit withstand time	tsc	VCC 360V, VGE = 15V, Tvj = 150C	5	s
Operating Junction temperature range	Tvj	-	-40~175	C
Storage temperature range	Tstg	-	-55~150	C
Thermal Characteristics
Thermal resistance junction-to-ambient	Rth(j-a)	-	62	C/W
Thermal resistance junction-to-case for IGBT	Rth(j-c)	-	3.0	C/W
Thermal resistance junction-to-case for Diode	Rth(j-c)	-	5.0	C/W
Electrical Characteristics (Tvj = 25C unless otherwise specified)
Collector-emitter breakdown voltage	BVCES	IC = 2mA, VGE = 0V	650	V
Collector-emitter saturation voltage	VCE(sat)	IC = 15A, VGE= 15V, Tvj = 25C	1.65 - 2.00	V
Collector-emitter saturation voltage	VCE(sat)	IC = 15A, VGE= 15V, Tvj = 175C	1.90	V
Diode forward voltage	VF	VGE = 0V, IF = 15A, Tvj = 25C	1.85 - 2.30	V
Diode forward voltage	VF	VGE = 0V, IF = 15A, Tvj = 175C	1.95	V
Gate-emitter threshold voltage	VGE(th)	VCE = VGE, IC = 0.5mA	4.5 - 6.5	V
Zero gate voltage collector current	ICES	VCE = 650V, VGE = 0V, Tvj = 25C	- 20	A
Gate-emitter leakage current	IGES	VGE = 20V, VCE = 0V	- 100	nA
Dynamic Characteristics
Total gate charge	QG	VCE = 520V, IC = 15A, VGE = 15V	- 61	nC
Gate-emitter charge	QGE	-	- 11	-
Gate-collector charge	QGC	-	- 35	-
Input capacitance	Cies	VCE = 25V, VGE = 0V, f = 1MHz	- 1129 -	pF
Output capacitance	Coes	-	- 57 -	pF
Reverse transfer capacitance	Cres	-	- 31 -	pF
Switching Characteristics (Tvj = 25C)
Turn-on delay time	td(on)	VGE = 15V, VCC = 400V, IC = 15A, RG = 10, Inductive Load	- 19 -	ns
Rise time	tr	-	- 27 -	-
Turn-off delay time	td(off)	-	- 128 -	-
Fall time	tf	-	- 32 -	-
Turn-on switching energy	Eon	-	- 270 -	J
Turn-off switching energy	Eoff	-	- 86 -	J
Total switching energy	Ets	-	- 356 -	-
Switching Characteristics (Tvj = 175C)
Turn-on delay time	td(on)	VGE = 15V, VCC = 400V, IC = 15A, RG = 10, Inductive Load	- 17 -	ns
Rise time	tr	-	- 29 -	-
Turn-off delay time	td(off)	-	- 150 -	-
Fall time	tf	-	- 130 -	-
Turn-on switching energy	Eon	-	- 342 -	J
Turn-off switching energy	Eoff	-	- 288 -	J
Total switching energy	Ets	-	- 630 -	-
Diode Characteristics
Reverse recovery time	trr	IF = 15A, diF/dt = 200A/ s, Tvj = 25C	- 150 -	ns
Reverse recovery current	Irr	IF = 15A, diF/dt = 200A/ s, Tvj = 25C	- 5.2 -	A
Reverse recovery charge	Qrr	IF = 15A, diF/dt = 200A/ s, Tvj = 25C	- 390 -	nC
Reverse recovery time	trr	IF = 15A, diF/dt = 200A/ s, Tvj = 175C	- 207 -	ns
Reverse recovery current	Irr	IF = 15A, diF/dt = 200A/ s, Tvj = 175C	- 6.1 -	A
Reverse recovery charge	Qrr	IF = 15A, diF/dt = 200A/ s, Tvj = 175C	- 631 -	nC

Part Number: MBF15T65PEHTH

Marking: 15T65PEH

Temperature Range: -55~150C

Packing: Tube

Model: MBF15T65PEH

Voltage Rating: 650V

Package Outline Dimension: TO-220F

2509121506_MagnaChip-Semicon-MBF15T65PEHTH_C51902189.pdf

TO220F Package 650V IGBT MagnaChip Semicon MBF15T65PEHTH Ideal for Inverter and Motor Control Systems Images

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