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60 Amp IGBT onsemi FGL60N100BNTDTU 1000 Volt with Advanced NPT Technology and High Input Impedance

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60 Amp IGBT onsemi FGL60N100BNTDTU 1000 Volt with Advanced NPT Technology and High Input Impedance

Td(off) : 630ns

Pd - Power Dissipation : 180W

Td(on) : 140ns

Collector-Emitter Breakdown Voltage (Vces) : 1kV

Reverse Transfer Capacitance (Cres) : 200pF

Input Capacitance(Cies) : 6nF

IGBT Type : NPT (Non-Punch Through)

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 4V@60mA

Gate Charge(Qg) : 275nC@15V

Operating Temperature : -55℃~+150℃@(Tj)

Output Capacitance(Coes) : 260pF

Reverse Recovery Time(trr) : 1.2us

Turn-On Energy (Eon) : -

Description : IGBT 1kV 60A 180W Through Hole TO-264-3

Mfr. Part # : FGL60N100BNTDTU

Model Number : FGL60N100BNTDTU

Package : TO-264-3

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Product Overview

The FGL60N100BNTD is a 1000 V, 60 A NPT Trench IGBT utilizing Fairchild's proprietary trench design and advanced NPT technology. It offers superior conduction and switching performance, high avalanche ruggedness, and easy parallel operation, making it ideal for hard switching applications such as UPS and welders. The device features high input impedance and a built-in fast recovery diode.

Product Attributes

  • Brand: ON Semiconductor (formerly Fairchild Semiconductor)
  • Trademarks: ON Semiconductor, ON Semiconductor logo
  • Patents, Trademarks, Copyrights, Trade Secrets: Owned by ON Semiconductor
  • Product/Patent Coverage: Accessible at www.onsemi.com/site/pdf/Patent-Marking.pdf
  • Copyright: 2000 Fairchild Semiconductor Corporation
  • Equal Opportunity/Affirmative Action Employer

Technical Specifications

Part NumberTop MarkPackageCollector to Emitter Voltage (Vces)Gate to Emitter Voltage (Vges)Collector Current (IC @ TC=25C)Collector Current (IC @ TC=100C)Pulsed Collector Current (ICM @ TC=25C)Diode Continuous Forward Current (IF @ TC=100C)Max Power Dissipation (PD @ TC=25C)Max Power Dissipation (PD @ TC=100C)Operating Junction Temperature (TJ)Storage Temperature Range (Tstg)Max Lead Temp. (TL)Thermal Resistance Junction to Case (RJC(IGBT))Thermal Resistance Junction to Case (RJC(Diode))Thermal Resistance Junction to Ambient (RJA)Collector to Emitter Breakdown Voltage (BVCES)Collector Cut-Off Current (ICES)G-E Leakage Current (IGES)G-E Threshold Voltage (VGE(th))Collector to Emitter Saturation Voltage (VCE(sat) @ IC=10A, VGE=15V)Collector to Emitter Saturation Voltage (VCE(sat) @ IC=60A, VGE=15V)Input Capacitance (Cies)Output Capacitance (Coes)Reverse Transfer Capacitance (Cres)Turn-On Delay Time (td(on))Rise Time (tr)Turn-Off Delay Time (td(off))Fall Time (tf)Total Gate Charge (Qg)Gate to Emitter Charge (Qge)Gate to Collector Charge (Qgc)Diode Forward Voltage (VFM @ IF=15A)Diode Forward Voltage (VFM @ IF=60A)Diode Reverse Recovery Time (trr)Instantaneous Reverse Current (IR)
FGL60N100BNTDFGL60N100BNTDTO-2641000 V 25 V60 A42 A200 A15 A180 W72 W-55 to +150 C-55 to +150 C300 C0.69 C/W2.08 C/W25 C/W1000 V1 mA500 nA4.0 - 7.0 V- 1.5 1.8 V- 2.5 2.9 V- 6000 pF- 260 pF- 200 pF- 140 ns- 320 ns- 630 ns- 130 ns- 275 nC- 45 nC- 95 nC- 1.2 1.7 V- 1.8 2.1 V1.2 - 1.5 us0.05 - 2.0 uA

2410121732_onsemi-FGL60N100BNTDTU_C105610.pdf


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