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Power semiconductor OSEN OGH50T65 Silicon FS Trench IGBT ideal for industrial UPS and welding machine

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Power semiconductor OSEN OGH50T65 Silicon FS Trench IGBT ideal for industrial UPS and welding machine

Td(off) : 125ns

Td(on) : 45ns

Collector-Emitter Breakdown Voltage (Vces) : 650V

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 4V@250uA

Reverse Recovery Time(trr) : 50ns

Description : IGBT 650V 100A Through Hole TO-3PNB

Mfr. Part # : OGH50T65

Model Number : OGH50T65

Package : TO-3PNB

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Product Overview

The OGH50T65 is a Silicon FS Trench IGBT designed for high-reliability applications. It offers reduced saturation pressure and fast switching speeds, making it easy to use in parallel configurations. Key benefits include high reliability, thermal stability, and a built-in quick-recovery diode. This IGBT is suitable for use in frequency transformers, UPS systems, and inverter welding machines.

Product Attributes

Brand: OSEN
Product Type: Silicon FS Trench IGBT
Package Type: TO-3PNB

Technical Specifications

Symbol	Parameters	Ratings	Unit	Conditions
Absolute Maximum Ratings
VCES	Maximum collector-emitter DC voltage	650	V
VGES	Maximum gate-emitter DC voltage	±20	V
IC	Collector DC current (Tc=25°C)	100	A
IC	Collector DC current (Tc=100°C)	50	A
IF	Diode current	30	A
Tstg	Storage temperature range	-55~150	°C
Tj Max.	Operating junction temperature	175	°C
Electrical Characteristics
VCES	Collector-emitter breakdown voltage	650	V	VGE=0V,ICE=250µA
ICES	Collector drain current under zero gate pressure	--	5.0 µA	VGE=0V,VCE=650V
IGES	Gate body drain current	--	±1 µA	VGE=±20V
VCE(sat)	Collector-emitter saturation pressure drop	--	2.2 - 2.5 V	IC=50A ,VGE=15V
VGE(th)	Threshold voltage	4.0 - 6.5	V	IC=250µA,VCE=VGE
VFM	Diode forward pressure drop	--	1.45 - 1.8 V	IF=30A
Switching Characteristics
Td(on)	Turn-On Delay Time	--	45 ns	VCE=400V,IC=50A, Rg=10Ω,VGE=15V, Inductive Load,Ta=25°C
Tr	Rise Time	--	145 ns
Td(off)	Turn-Off Delay Time	--	125 ns
Tf	Fall Time	--	130 ns
Qg	Total Gate Charge	--	145 nC	VCE=400V,IC=50A, VGE=15V
Qgs	Gate-Source Charge	--	48 nC
Qgd	Gate-Drain Charge	--	46 nC
Dynamic Characteristics
Ciss	Input Capacitance	--	4530 pF	VCE=30V,VGE=0V f=1MHz
Coss	Output Capacitance	--	90 pF
Crss	Reverse Transfer Capacitance	--	41 pF
Trr	Reverse recovery time	--	38 - 50 nS	IF=0.5A IR=1A Irr=0.25A
Rth(j-c)	Thermal Resistance, Junction to Case	--	0.52 °C/W

2504101957_OSEN-OGH50T65_C45359865.pdf

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