| Absolute Maximum Ratings |
| VCES | Collector-Emitter Voltage | | | 1200 | V |
| VGES | Gate-Emitter Voltage | | | 25 | V |
| IC | Collector Current @TC = 25C | | | 64 | A |
| IC | Collector Current @TC = 100C | | | 40 | A |
| ICM(1) | Pulsed Collector Current | | | 160 | A |
| IF | Diode Continuous Forward Current @TC = 100C | | | 40 | A |
| IFM | Diode Maximum Forward Current | | | 240 | A |
| PD | Maximum Power Dissipation @TC = 25C | | | 500 | W |
| PD | Maximum Power Dissipation @TC = 100C | | | 200 | W |
| SCWT | Short Circuit Withstand Time, VCE = 600V, VGE = 15V, TC = 125C | | | 10 | s |
| TJ | Operating Junction Temperature | -55 | | +150 | C |
| TSTG | Storage Temperature Range | -55 | | +150 | C |
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 seconds | | | 300 | C |
| Thermal Characteristics |
| RJC(IGBT) | Thermal Resistance, Junction-to-Case | | -- | 0.25 | C/W |
| RJC(DIODE) | Thermal Resistance, Junction-to-Case | | -- | 0.7 | C/W |
| RJA | Thermal Resistance, Junction-to-Ambient | | -- | 25 | C/W |
| Electrical Characteristics of the IGBT (TC = 25C unless otherwise noted) |
| BVCES | Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA | 1200 | -- | -- | V |
| BVCES/ TJ | Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 1mA | -- | 0.6 | -- | V/C |
| ICES | Collector Cut-Off Current VCE = VCES, VGE = 0V | -- | -- | 1 | mA |
| IGES | G-E Leakage Current VGE = VGES, VCE = 0V | -- | -- | 250 | nA |
| VGE(th) | G-E Threshold Voltage IC = 250A, VCE = VGE | 3.5 | 5.5 | 7.5 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V | -- | 2.6 | 3.2 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V, TC = 125C | -- | 2.9 | -- | V |
| VCE(sat) | Collector to Emitter Saturation Voltage IC = 64A, VGE = 15V | -- | 3.15 | -- | V |
| Cies | Input Capacitance VCE = 30V, VGE = 0V f = 1MHz | -- | 3200 | -- | pF |
| Coes | Output Capacitance | -- | 370 | -- | pF |
| Cres | Reverse Transfer Capacitance | -- | 125 | -- | pF |
| Switching Characteristics (TC = 25C) |
| td(on) | Turn-On Delay Time VCC = 600V, IC = 40A, RG = 5, VGE = 15V, Inductive Load | -- | 15 | -- | ns |
| tr | Rise Time | -- | 20 | -- | ns |
| td(off) | Turn-Off Delay Time | -- | 110 | -- | ns |
| tf | Fall Time | -- | 40 | 80 | ns |
| Eon | Turn-On Switching Loss | -- | 2.3 | 3.45 | mJ |
| Eoff | Turn-Off Switching Loss | -- | 1.1 | 1.65 | mJ |
| Ets | Total Switching Loss | -- | 3.4 | 5.1 | mJ |
| Switching Characteristics (TC = 125C) |
| td(on) | Turn-On Delay Time VCC = 600V, IC = 40A, RG = 5, VGE = 15V, Inductive Load | -- | 20 | -- | ns |
| tr | Rise Time | -- | 25 | -- | ns |
| td(off) | Turn-Off Delay Time | -- | 120 | -- | ns |
| tf | Fall Time | -- | 45 | -- | ns |
| Eon | Turn-On Switching Loss | -- | 2.5 | -- | mJ |
| Eoff | Turn-Off Switching Loss | -- | 1.8 | -- | mJ |
| Ets | Total Switching Loss | -- | 4.3 | -- | mJ |
| Qg | Total Gate charge VCE = 600V, IC = 40A, VGE = 15V | -- | 220 | 330 | nC |
| Qge | Gate-Emitter Charge | -- | 25 | 38 | nC |
| Qgc | Gate-Collector Charge | -- | 130 | 195 | nC |
| Electrical Characteristics of DIODE (TC = 25C unless otherwise noted) |
| VFM | Diode Forward Voltage IF = 40A, TC = 25C | -- | 3.2 | 4.0 | V |
| VFM | Diode Forward Voltage IF = 40A, TC = 125C | -- | 2.7 | -- | V |
| trr | Diode Reverse Recovery Time IF = 40A, di/dt = 200A/s, TC = 25C | -- | 75 | 112 | nS |
| trr | Diode Reverse Recovery Time IF = 40A, di/dt = 200A/s, TC = 125C | -- | 130 | -- | -- |
| Irr | Diode Peak Reverse Recovery Current TC = 25C | -- | 8 | 12 | A |
| Irr | Diode Peak Reverse Recovery Current TC = 125C | -- | 13 | -- | -- |
| Qrr | Diode Reverse Recovery Charge TC = 25C | -- | 300 | 450 | nC |
| Qrr | Diode Reverse Recovery Charge TC = 125C | -- | 845 | -- | -- |
