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Power Amplifier Switching Circuit PNP Transistor Featuring Goodwork MJD45H11 Low Saturation Voltage

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Power Amplifier Switching Circuit PNP Transistor Featuring Goodwork MJD45H11 Low Saturation Voltage

Current - Collector Cutoff : 10uA

Emitter-Base Voltage(Vebo) : 5V

Pd - Power Dissipation : 20W

Transition frequency(fT) : 50MHz

type : PNP

Current - Collector(Ic) : 8A

Collector - Emitter Voltage VCEO : 80V

Operating Temperature : -65℃~+150℃@(Tj)

Description : Bipolar (BJT) Transistor PNP 80V 8A 50MHz 20W Surface Mount TO-252

Mfr. Part # : MJD45H11

Model Number : MJD45H11

Package : TO-252

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Product Overview

The MJD45H11 is a PNP transistor in a TO-252 package, designed for applications such as power amplifiers and switching circuits. It features a low collector-emitter saturation voltage and fast switching speed. This transistor is complementary to the MJD44H11.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Plastic-Encapsulate
Color: Not specified
Certifications: Not specified

Technical Specifications

Model	Parameter	Symbol	Conditions	Value	Unit
MJD45H11 (PNP)	Collector-base breakdown voltage	BVCBO	IC = -100AIE = 0	-100	V
	Collector-emitter breakdown voltage	BVCEO	IC = - 10mAIB = 0	-80	V
	Emitter-base breakdown voltage	BVEBO	IE = -100AIC = 0	-5	V
	Collector cut-off current	ICBO	VCB = -80V VBE = 0	-10	A
	Emitter cut-off current	IEBO	VEB = -5VIC = 0	-50	A
	DC current gain	hFE			60
	Collector-emitter saturation voltage	VCE(sat)	IC = -8AIB =-0.4A	-1	V
	Base-emitter saturation voltage	VBE(sat)	IC = -8A IB = -0.8A	-1.5	V
	Transition frequency	fT	VCE = -10V IB = -0.5A	50	MHz
	Output Capacitance	Cob	VCB = 10V,IE =0, f=1MHz	130	pF

2504251720_GOODWORK-MJD45H11_C48580717.pdf

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