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PNP Epitaxial Silicon Transistor JSMSEMI 2SA1837-O for Amplifier Applications Featuring High Voltage

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PNP Epitaxial Silicon Transistor JSMSEMI 2SA1837-O for Amplifier Applications Featuring High Voltage

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 1uA

Pd - Power Dissipation : 20W

Transition frequency(fT) : 70MHz

type : PNP

Current - Collector(Ic) : 1A

Collector - Emitter Voltage VCEO : 230V

Operating Temperature : -

Description : Bipolar (BJT) Transistor PNP 230V 1A 70MHz 20W Through Hole TO-220F

Mfr. Part # : 2SA1837-O

Model Number : 2SA1837-O

Package : TO-220F

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Product Overview

PNP Epitaxial Silicon Transistor designed for Power Amplifier Applications. Key features include a high collector voltage of VCEO = -230V (min) and a high transition frequency of fT = 70MHz (Typ.). This device is complementary to the 2SC4793 and is a RoHS product.

Product Attributes

Brand: JSMICRO Semiconductor
Material: Epitaxial Silicon
Certifications: Halogen Free, RoHS

Technical Specifications

Order Codes	Marking	Package	Packaging	Collector-Emitter Voltage (VCBO)	Collector-Emitter Voltage (VCEO) (IB=0)	Emitter-Base Voltage (VEBO)	Collector Current (IC) (DC)	Base Current (IB)	Collector Dissipation (Ta=25)	Collector Dissipation (Tc=25)	Junction Temperature (Tj)	Storage Temperature (Tstg)	Thermal Resistance (Rth(j-a))	Thermal Resistance (Rth(j-c))	Collector Cut-off Current (ICBO)	Emitter Cut-off Current (IEBO)	Breakdown Voltage (V(BR)CEO)	DC Current Gain (hFE)	Collector-Emitter Saturation Voltage (VCE(sat))	Base-Emitter On Voltage (VBE(ON))	Transition Frequency (fT)	Output Capacitance (Cob)
2SA1837-O	2SA1837	TO-220F	Tube	-230 V	-230 V	-5 V	-1 A	-0.1 A	2.0 W	20 W	150	-55~+150	62.5 /W	6.25 /W	-1.0 A	-1.0 A	-230 V	100 - 270	-1.5 V	-1.0 V	70 MHz	30 pF

2401051646_JSMSEMI-2SA1837-O_C2848735.pdf

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