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Emitter-Base Voltage(Vebo) : 5V
Current - Collector Cutoff : 50uA
Pd - Power Dissipation : 300mW
Transition frequency(fT) : 300MHz
type : PNP
Current - Collector(Ic) : 500mA
Collector - Emitter Voltage VCEO : 150V
Operating Temperature : -55℃~+150℃
Description : Bipolar (BJT) Transistor PNP 150V 500mA 300MHz 300mW Surface Mount SOT-23
Mfr. Part # : LMBT5401LT1G
Model Number : LMBT5401LT1G
Package : SOT-23
The LMBT5401LT1G is a high voltage transistor from LESHAN RADIO COMPANY, LTD., designed for various electronic applications. It offers compliance with RoHS requirements and an 'S' prefix variant is available for automotive applications requiring AEC-Q101 qualification and PPAP capability.
| Characteristic | Symbol | Value | Unit | Conditions |
| Maximum Ratings | ||||
| CollectorEmitter Voltage | V CEO | 150 | Vdc | |
| CollectorBase Voltage | V CBO | 160 | Vdc | |
| EmitterBase Voltage | V EBO | 5.0 | Vdc | |
| Collector Current Continuous | I C | 500 | mAdc | |
| Thermal Characteristics | ||||
| Total Device Dissipation (FR-5 Board) | P D | 225 | mW | T A=25 C; Derate above 25C: 1.8 mW/C |
| Thermal Resistance, Junction to Ambient (FR-5 Board) | R JA | 556 | C/W | |
| Total Device Dissipation (Alumina Substrate) | P D | 300 | mW | T A = 25C; Derate above 25C: 2.4 mW/C |
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | R JA | 417 | C/W | |
| Junction and Storage Temperature | T J, Tstg | -55 to +150 | C | |
| Electrical Characteristics (T A = 25C unless otherwise noted) | ||||
| OFF Characteristics | ||||
| CollectorEmitter Breakdown Voltage | V (BR)CEO | 150 | Vdc | I C = 1.0 mAdc, I B = 0 |
| CollectorBase Breakdown Voltage | V (BR)CBO | 160 | Vdc | I C = 100 Adc, I E = 0 |
| Emitter-BAse Breakdown Voltage | V(BR)EBO | 5.0 | Vdc | I E= 10Adc,I C=0 |
| Collector Cutoff Current | I CBO | 50 | nAdc | V CB = 120 Vdc, IE= 0 |
| Collector Cutoff Current | I CBO | 50 | Adc | V CB = 120 Vdc, IE= 0, T A=100 C |
| ON Characteristics | ||||
| DC Current Gain | hFE | 50 | I C = 1.0mAdc, V CE = 5.0 Vdc | |
| DC Current Gain | hFE | 60 to 240 | I C = 10 mAdc, V CE = 5.0 Vdc | |
| DC Current Gain | hFE | 50 | I C = 50 mAdc, V CE = 5.0 Vdc | |
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.2 | Vdc | I C = 10 mAdc, I B = 1.0 mAdc |
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.5 | Vdc | I C = 50 mAdc, I B = 5.0 mAdc |
| BaseEmitter Saturation Voltage | VBE(sat) | 1.0 | Vdc | I C = 10 mAdc, I B = 1.0 mAdc |
| BaseEmitter Saturation Voltage | VBE(sat) | 1.0 | Vdc | I C = 50 mAdc, I B = 5.0 mAdc |
| Small-Signal Characteristics | ||||
| CurrentGain Bandwidth Product | f T | 100 to 300 | MHz | I C = 10 mAdc, V CE= 10 Vdc, f = 100 MHz |
| Output Capacitance | C obo | 6.0 | pF | VCB= 10 Vdc, I E = 0, f = 1.0 MHz |
| Small-Signal Current Gain | h fe | 40 to 200 | I C= 1.0mAdc, VCE = 10Vdc, f = 1.0 kHz | |
| Noise Figure | N F | 8.0 | dB | I C = 200 Adc, VCE= 5.0 Vdc, Rs=10, f = 1.0 kHz |
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High voltage transistor LRC LMBT5401LT1G suitable for automotive and general electronic applications Images |