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High voltage transistor LRC LMBT5401LT1G suitable for automotive and general electronic applications

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High voltage transistor LRC LMBT5401LT1G suitable for automotive and general electronic applications

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 50uA

Pd - Power Dissipation : 300mW

Transition frequency(fT) : 300MHz

type : PNP

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 150V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor PNP 150V 500mA 300MHz 300mW Surface Mount SOT-23

Mfr. Part # : LMBT5401LT1G

Model Number : LMBT5401LT1G

Package : SOT-23

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Product Overview

The LMBT5401LT1G is a high voltage transistor from LESHAN RADIO COMPANY, LTD., designed for various electronic applications. It offers compliance with RoHS requirements and an 'S' prefix variant is available for automotive applications requiring AEC-Q101 qualification and PPAP capability.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Compliance: RoHS
  • Variant: S-Prefix for Automotive (AEC-Q101 Qualified, PPAP Capable)

Technical Specifications

CharacteristicSymbolValueUnitConditions
Maximum Ratings
CollectorEmitter VoltageV CEO150Vdc
CollectorBase VoltageV CBO160Vdc
EmitterBase VoltageV EBO5.0Vdc
Collector Current ContinuousI C500mAdc
Thermal Characteristics
Total Device Dissipation (FR-5 Board)P D225mWT A=25 C; Derate above 25C: 1.8 mW/C
Thermal Resistance, Junction to Ambient (FR-5 Board)R JA556C/W
Total Device Dissipation (Alumina Substrate)P D300mWT A = 25C; Derate above 25C: 2.4 mW/C
Thermal Resistance, Junction to Ambient (Alumina Substrate)R JA417C/W
Junction and Storage TemperatureT J, Tstg-55 to +150C
Electrical Characteristics (T A = 25C unless otherwise noted)
OFF Characteristics
CollectorEmitter Breakdown VoltageV (BR)CEO150VdcI C = 1.0 mAdc, I B = 0
CollectorBase Breakdown VoltageV (BR)CBO160VdcI C = 100 Adc, I E = 0
Emitter-BAse Breakdown VoltageV(BR)EBO5.0VdcI E= 10Adc,I C=0
Collector Cutoff CurrentI CBO50nAdcV CB = 120 Vdc, IE= 0
Collector Cutoff CurrentI CBO50AdcV CB = 120 Vdc, IE= 0, T A=100 C
ON Characteristics
DC Current GainhFE50I C = 1.0mAdc, V CE = 5.0 Vdc
DC Current GainhFE60 to 240I C = 10 mAdc, V CE = 5.0 Vdc
DC Current GainhFE50I C = 50 mAdc, V CE = 5.0 Vdc
CollectorEmitter Saturation VoltageVCE(sat)0.2VdcI C = 10 mAdc, I B = 1.0 mAdc
CollectorEmitter Saturation VoltageVCE(sat)0.5VdcI C = 50 mAdc, I B = 5.0 mAdc
BaseEmitter Saturation VoltageVBE(sat)1.0VdcI C = 10 mAdc, I B = 1.0 mAdc
BaseEmitter Saturation VoltageVBE(sat)1.0VdcI C = 50 mAdc, I B = 5.0 mAdc
Small-Signal Characteristics
CurrentGain Bandwidth Productf T100 to 300MHzI C = 10 mAdc, V CE= 10 Vdc, f = 100 MHz
Output CapacitanceC obo6.0pFVCB= 10 Vdc, I E = 0, f = 1.0 MHz
Small-Signal Current Gainh fe40 to 200I C= 1.0mAdc, VCE = 10Vdc, f = 1.0 kHz
Noise FigureN F8.0dBI C = 200 Adc, VCE= 5.0 Vdc, Rs=10, f = 1.0 kHz

1809212131_LRC-LMBT5401LT1G_C57683.pdf


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