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High Voltage Transistor Automotive Applications LRC LMBT5401LT1G HW RoHS Halogen Free Certified

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High Voltage Transistor Automotive Applications LRC LMBT5401LT1G HW RoHS Halogen Free Certified

Emitter-Base Voltage(Vebo) : 5V

Pd - Power Dissipation : 300mW

Transition frequency(fT) : 300MHz

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 150V

Description : 300mW 500mA 150V SOT-23 Single Bipolar Transistors RoHS

Mfr. Part # : LMBT5401LT1G-HW

Model Number : LMBT5401LT1G-HW

Package : SOT-23

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Product Overview

High Voltage Transistor designed for automotive and other applications requiring unique site and control change requirements. The S- prefix variants are AEC-Q101 qualified and PPAP capable. These transistors offer RoHS compliance and Halogen Free material.

Product Attributes

Brand: Leshan Radio Company, LTD.
Certifications: RoHS, Halogen Free, AEC-Q101 Qualified (S- prefix variants), PPAP Capable (S- prefix variants)

Technical Specifications

Parameter	Symbol	LMBT5401LT1G Limits	S-LMBT5401LT1G Limits	Unit	Notes
Collector-Emitter Voltage	VCEO	-150	-	V
Collector-Base voltage	VCBO	-	-160	V
Emitter-Base Voltage	VEBO	-500	-	V
Collector current Continuous	IC	300	10000/Tape&Reel	mA
Total Device Dissipation	PD	300	225	mW	FR-5 Board @ TA = 25C
Derate above 25C		1.8		mW/
Thermal Resistance, JunctiontoAmbient	RJA	417	556	/W	FR-5 Board
Total Device Dissipation	PD	-	-	mW	Alumina Substrate, (Note 2)@ TA = 25C
Derate above 25C		-	-	mW/	Alumina Substrate
Thermal Resistance, JunctiontoAmbient	RJA	-	-	/W	Alumina Substrate
Junction and Storage temperature	TJ,Tstg	55+150	55+150
Collector-Emitter Breakdown Voltage	V(BR)CEO	-150	-150	V	(IC =-1.0mA,IB=0)
Collector-Base Breakdown voltage	V(BR)CBO	-160	-160	V	(IC = -100A,IE=0)
Emitter-Base Breakdown Voltage	V(BR)EBO	-5	-5	V	(IE = -10A,IC=0)
Collector Cutoff Current	ICBO	-50	-50	nA	(VCB = -120 V,IE=0)
Collector Cutoff Current	ICBO	-	-	A	(VCB = -120 V,IE=0,TA=100)
Collector-Emitter cutoff Current	ICEO	-10	-10	A	(VCE-150V, IB=0)
DC Current Gain	HFE	40-240	40-200		(IC = 1.0mA, VCE = 5.0 V)
DC Current Gain	HFE	50-500	50-500		(IC = 10 mA, VCE = 5.0 V)
DC Current Gain	HFE	-	-		(IC = 50 mA, VCE = 5.0 V)
Collector-Emitter Saturation Voltage	VCE(S)	-0.2	-0.2	V	(IC = 10 mA, IB = 1.0 mA)
Collector-Emitter Saturation Voltage	VCE(S)	-	-	V	(IC = 50 mA, IB = 5.0 mA)
BaseEmitter Saturation Voltage	VBE(S)	-1	-1	V	(IC = 10 mA, IB = 1.0 mA)
BaseEmitter Saturation Voltage	VBE(S)	-	-	V	(IC = 50 mA, IB = 5.0 mA)
CurrentGain Bandwidth Product	fT	100	100	MHz	(IC = 10 mA, VCE = 10 V, f = 100 MHz)
Output Capacitance	Cobo	6	6	pF	(VCB = 10 V, IE = 0, f = 1.0 MHz)
SmallSignal Current Gain	hfe	300	300		(IC = 1.0mA, VCE = 10V, f = 1.0 kHz)
Noise Figure	NF	8	8	dB	(IC =200 A,VCE= 5.0 V,Rs=10, f=1.0 kHz)

2211091800_LRC-LMBT5401LT1G-HW_C2941705.pdf

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