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High Collector Current DIODES BC847BFA-7B 45V NPN Small Signal Transistor in Compact DFN0806 Package

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High Collector Current DIODES BC847BFA-7B 45V NPN Small Signal Transistor in Compact DFN0806 Package

Emitter-Base Voltage(Vebo) : 6V

Current - Collector Cutoff : 15nA

Pd - Power Dissipation : 435mW

Transition frequency(fT) : 170MHz

type : NPN

Current - Collector(Ic) : 100mA

Collector - Emitter Voltage VCEO : 45V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor NPN 45V 100mA 170MHz 435mW Surface Mount DFN-3(0.8x0.6)

Mfr. Part # : BC847BFA-7B

Model Number : BC847BFA-7B

Package : DFN-3(0.8x0.6)

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Product Overview

The BC847BFA is a 45V NPN small signal transistor in a compact DFN0806 package. It offers a high collector current of 100mA and a power dissipation of 435mW. Its extremely small footprint (0.48mm) and low height (0.4mm) make it ideal for space-constrained applications. This device is AEC-Q101 qualified, lead-free, and RoHS compliant, making it suitable for high-reliability automotive and industrial applications.

Product Attributes

Brand: Diodes Incorporated
Complementary PNP Type: BC857BFA
Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device), Qualified to AEC-Q101 Standards
Automotive Compliant Part Available: BC847BFAQ

Technical Specifications

Characteristic	Symbol	Value	Unit	Test Condition
Absolute Maximum Ratings
Collector-Base Voltage	VCBO	50	V
Collector-Emitter Voltage	VCEO	45	V
Emitter-Base Voltage	VEBO	6.0	V
Continuous Collector Current	IC	100	mA
Peak Pulse Collector Current	ICM	200	mA
Thermal Characteristics
Power Dissipation	PD	435	mW	@TA = +25C, Note 5
Thermal Resistance, Junction to Ambient	RJA	287	C/W	@TA = +25C, Note 5
Thermal Resistance, Junction to Lead	RJL	150	C/W	Note 6
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	C
ESD Ratings
Electrostatic Discharge - Human Body Model	ESD HBM	4,000	V	JEDEC Class 3A
Electrostatic Discharge - Machine Model	ESD MM	200	V	JEDEC Class B
Electrical Characteristics
Collector-Base Breakdown Voltage	BVCBO	50	V	IC = 50A, IB = 0
Collector-Emitter Breakdown Voltage	BVCES	50	V	IC = 50A, IB = 0
Collector-Emitter Breakdown Voltage	BVCEO	45	V	IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage	BVEBO	6.0	V	IE = 50A, IC = 0
Collector-Base Cut-Off Current	ICBO	15	nA	VCB = 40V
Collector-Emitter Cut-Off Current	ICES	15	nA	VCE = 40V
DC Current Gain	hFE	200 - 470		IC = 2.0mA, VCE = 5.0V
DC Current Gain	hFE	260 - 470		IC = 10A, VCE = 5.0V
Collector-Emitter Saturation Voltage	VCE(sat)	122	mV	IC = 10mA, IB = 0.5mA
Collector-Emitter Saturation Voltage	VCE(sat)	300	mV	IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage	VBE(sat)	880	mV	IC = 10mA, IB = 0.5mA
Base-Emitter Saturation Voltage	VBE(sat)	1,100	mV	IC = 100mA, IB = 5.0mA
Base-Emitter Voltage	VBE(on)	725	mV	IC = 10mA, VCE = 5V
Output Capacitance	Cobo	1.5	pF	VCB = 10.0V, f = 1.0MHz, IE = 0
Current Gain-Bandwidth Product	fT	170	MHz	VCE = 5V, IC = 10mA, f = 100MHz

2412251007_DIODES-BC847BFA-7B_C155299.pdf

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