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Emitter-Base Voltage(Vebo) : 6V
Current - Collector Cutoff : 10nA
Pd - Power Dissipation : 200mW
Transition frequency(fT) : 300MHz
type : NPN+PNP
Number : 1 NPN + 1 PNP
Current - Collector(Ic) : 600mA
Collector - Emitter Voltage VCEO : 40V
Operating Temperature : -55℃~+150℃
Description : Bipolar (BJT) Transistor NPN+PNP 40V 600mA 300MHz 200mW Surface Mount SOT-363
Mfr. Part # : MMDT2227Q-7-F
Model Number : MMDT2227Q-7-F
Package : SOT-363
The MMDT2227Q is a complementary small signal transistor featuring one 2222A Type (NPN) and one 2907A Type (PNP) in a single SOT363 package. It is ideal for low-power amplification and switching applications. This device is totally lead-free, fully RoHS compliant, and halogen and antimony-free, making it a "Green" device. It is also AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities, making it suitable for automotive applications.
| Characteristic | 2222A Type (NPN) | 2907A Type (PNP) | Unit |
| Collector-Base Breakdown Voltage (VCBO) | 75 | -60 | V |
| Collector-Emitter Breakdown Voltage (VCEO) | 40 | -60 | V |
| Emitter-Base Breakdown Voltage (VEBO) | 6 | -6 | V |
| Continuous Collector Current (IC) | 600 | -600 | mA |
| Power Dissipation (PD) | 200 | mW | |
| Thermal Resistance, Junction to Ambient (RJA) | 625 | C/W | |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to +150 | C | |
| ESD Rating (HBM) | 4,000 | V | |
| DC Current Gain (hFE) | 35 - 300 | 75 - 300 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.3 - 1.0 | -0.4 - -1.6 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | 0.6 - 2.0 | -1.3 - -2.6 | V |
| Output Capacitance (Cobo) | 8 | 8.0 | pF |
| Input Capacitance (Cibo) | 25 | 30 | pF |
| Current Gain-Bandwidth Product (fT) | 300 | 200 | MHz |
| Switching Time (e.g., Rise Time) | 25 | 40 | ns |
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Complementary Transistor Pair Diodes MMDT2227Q-7-F NPN PNP SOT363 Package for Switching Applications Images |