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Silicon Epitaxial Planar Transistor GOODWORK MMBT3906W Perfect for Amplifier and Switching Solutions

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Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 50nA

Pd - Power Dissipation : 200mW

Transition frequency(fT) : 250MHz

type : PNP

Current - Collector(Ic) : 200mA

Collector - Emitter Voltage VCEO : 40V

Operating Temperature : -55℃~+150℃@(Tj)

Description : Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 200mW Surface Mount SOT-323

Mfr. Part # : MMBT3906W

Model Number : MMBT3906W

Package : SOT-323

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MMBT3906W PNP Silicon Epitaxial Planar Transistor

The MMBT3906W is a PNP Silicon Epitaxial Planar Transistor designed for switching and amplifier applications.

Parameter	Symbol	Value	Unit	Conditions
DC Current Gain	hFE	80	-	at -VCE = 1 V, -IC = 1 mA
		100	-	at -VCE = 1 V, -IC = 10 mA
		60	-	at -VCE = 1 V, -IC = 50 mA
		30	-	at -VCE = 1 V, -IC = 100 mA
		-	300	-
Collector Emitter Cutoff Current	ICES	-	50 nA	at -VCE = 30 V
Emitter Base Cutoff Current	IEBO	-	50 nA	at -VEB = 3 V
Collector Base Breakdown Voltage	-V(BR)CBO	40	- V	at -IC = 10 A
Collector Emitter Breakdown Voltage	-V(BR)CEO	40	- V	at -IC = 1 mA
Emitter Base Breakdown Voltage	-V(BR)EBO	5	- V	at -IE = 10 A
Collector Emitter Saturation Voltage	-VCE(sat)	-	0.25 V	at -IC = 10 mA, -IB = 1 mA
Collector Emitter Saturation Voltage	-VCE(sat)	-	0.4 V	at -IC = 50 mA, -IB = 5 mA
Base Emitter Saturation Voltage	-VBE(sat)	0.65	- 0.85 V	at -IC = 10 mA, -IB = 1 mA
Base Emitter Saturation Voltage	-VBE(sat)	-	0.95 V	at -IC = 50 mA, -IB = 5 mA
Transition Frequency	fT	250	- MHz	at -VCE = 20 V, IE = 10 mA, f = 100 MHz
Collector Output Capacitance	Cob	-	4.5 pF	at -VCB = 10 V, f = 100 KHz
Delay Time	td	-	35 ns	at -VCC = 3 V, -VBE(OFF) = 0.5 V, -IC = 10 mA, -IB1 = 1 mA
Rise Time	tr	-	35 ns	at -VCC = 3 V, -VBE(OFF) = 0.5 V, -IC = 10 mA, -IB1 = 1 mA
Storage Time	tstg	-	225 ns	at -VCC = 3 V, -IC = 10 mA, IB1 = -IB2 = -1 mA
Fall Time	tf	-	75 ns	at -VCC = 3 V, -IC = 10 mA, IB1 = -IB2 = -1 mA

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