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General Purpose PNP Transistor GOODWORK 2N3906 Suitable for Amplification and Switching Applications

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General Purpose PNP Transistor GOODWORK 2N3906 Suitable for Amplification and Switching Applications

Current - Collector Cutoff : 100nA

Emitter-Base Voltage(Vebo) : 5V

Pd - Power Dissipation : 200mW

Transition frequency(fT) : 300MHz

Current - Collector(Ic) : 200mA

Collector - Emitter Voltage VCEO : 40V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor 40V 0.2A 300MHz 0.2W Surface Mount SOT-23

Mfr. Part # : 2N3906

Model Number : 2N3906

Package : SOT-23

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Product Overview

The 2N3906 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features epitaxial planar die construction and is recommended as a complementary type to the NPN transistor MMBT3904. This device offers a range of electrical characteristics suitable for various electronic circuits.

Product Attributes

Brand: DEMACHEL
Type: PNP TRANSISTOR
Package: SOT-23
Marking Code: 2A

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC =-10uA, IE = 0	-40		V
Collector-emitter breakdown voltage	V(BR)CEO	IC =-1 mA, IB = 0	-40		V
Emitter-base breakdown voltage	V(BR)EBO	IE =-10uA, IC = 0	-5		V
Collector cut-off current	ICBO	VCB =-40V, IE = 0		-50	nA
Collector cut-off current	ICEX	VCB =-40V, IE = 0		-50	nA
DC current gain	hFE1	VC =-20V, IC =-10mA, IB = 0		-100
DC current gain	hFE2	VC =-30V, IC =-10mA, IB = 0		-300
DC current gain	hFE3	VC =-3V, IC =-10mA, IB = 1mA		300
Collector-emitter saturation voltage	VCE(sat)	IC =-10mA, IB = 1mA		-0.3	V
Collector-emitter saturation voltage	VCEsat	IC =-50mA, IB =-5mA		-0.95	V
Base-emitter saturation voltage	VBE(sat)	IC =-10mA, IB = 1mA		-0.95	V
Base-emitter saturation voltage	VBE(sat)	IC =-50mA, IB =-5mA		-1.2	V
Delay time	td	VCC =-3V, IC =-10mA, IB1= 1mA, IB2=- 1mA		-100	ns
Rise time	tr	VCC =-3V, IC =-10mA, IB1= 1mA, IB2=- 1mA		-35	ns
Storage time	ts	VCC =-3V, IC =-10mA, IB1= 1mA, IB2=- 1mA		-100	ns
Fall time	tf	VCC =-3V, IC =-10mA, IB1= 1mA, IB2=- 1mA		-35	ns
Transition frequency	fT	VC =-20V, IC =-10mA, f=100MHz		300	MHz
Collector-base capacitance	Cob	IE = 0, f=1MHz		10	pF
Collector cut-off current	ICEX	VCB =-30V, IE = 0		-50	nA
Emitter cut-off current	IEBO	VEB =-5V, IC = 0		-50	nA
Collector Dissipation	PC	(Ta=25 unless otherwise noted)		0.2	W
Thermal Resistance Junction To Ambient	RthJA	(Ta=25 unless otherwise noted)		625	/W
Operation Junction and Storage Temperature Range	TJ,Tstg	(Ta=25 unless otherwise noted)	-55	+150

2506041705_GOODWORK-2N3906_C49023424.pdf

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