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voltage controlled MOSFET TOSHIBA TK20S06K3L T6L1 NQ featuring trench and double diffusion structure

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voltage controlled MOSFET TOSHIBA TK20S06K3L T6L1 NQ featuring trench and double diffusion structure

Description : JFETs RoHS

Mfr. Part # : TK20S06K3L(T6L1,NQ

Model Number : TK20S06K3L(T6L1,NQ

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Toshiba MOSFET Product Guide 2009-9

Toshiba MOSFETs are designed to meet the demands of ultra-high-density applications, offering superior frequency and switching characteristics due to their trench structure and double-diffusion MOS (D-MOS) structure. These devices are voltage-controlled, requiring low drive power and enabling easy parallel connection. Key advantages include guaranteed avalanche capability, improved built-in diode function, high ruggedness, high-speed switching, low ON-resistance (RDS(ON)) for reduced power consumption, smaller package sizes, and low drive loss.

Product Attributes

Brand: Toshiba
Origin: Japan (implied by domain)

Technical Specifications

Series	Structure	Key Features	Applications	VDSS Range
-MOS	Double-Diffusion MOS (D-MOS)	High-withstand voltage, high-current devices, high-performance, low ON-resistance, low power loss.	Switching power supplies, AC adapters, Motor drivers	Not specified
U-MOS	Trench Type	Higher channel density, lower ON-resistance than other MOSFET structures. Ideal for synchronous rectification.	Synchronous rectification on the secondary side of power supply circuits, Lithium-ion secondary battery protection circuits, Notebook PCs, Portable electronic devices, DC-DC converters	40 V to 150 V
DTMOS	Super-Junction Structure	Realizes high withstand voltage and ON-resistance lower than the conventional theoretical limit of silicon. Achieves low ON-resistance and low gate charge (Qg).	Switching power supplies, AC adapters, Motor drivers, Solenoids and lamp drivers	600 V, 650 V
High-Speed -MOS	-MOS	Higher switching speed than the well-proven -MOS Series. Available in high-speed switching and high-speed diode series.	Inverters, Switching power supplies, Motor drivers, AC adapters	450 V to 600 V
-MOSVII	-MOS	Reduced capacitances due to optimized chip design, wider range of electrical characteristics.	Switching power supplies, AC adapters, Motor drivers	450 V to 650 V
TO-220SM(W)	Trench technology	Low ON-resistance, high current-carrying capability. Low-voltage drive (VGS = 4 V) possible due to ultra-low ON-resistance.	Lithium-ion secondary battery protection circuits, Notebook PCs, Portable electronic devices, DC-DC converters	40 V to 150 V
SOP and TSON Series	Trench technology	Compact and thin, small mounting area.	Lithium-ion secondary battery protection circuits, Notebook PCs	20 V to 250 V
LGA and STP Series	Trench technology	Ultra-small and thin package.	Lithium-ion secondary battery protection circuits in various portable electronic devices	20 V to 30 V
VS and PS Series	Not specified	Very compact and thin.	Various electronic devices, Motor drivers, Switching power supplies	12 V to 40 V
SSM Series	Not specified	Very compact and thin, low voltage drive. Available in a wide range of packages.	Cell phones, Notebook PCs, Portable electronic devices, Small-signal switching	12 V to 60 V

2411191413_TOSHIBA-TK20S06K3L-T6L1-NQ_C22180993.pdf

voltage controlled MOSFET TOSHIBA TK20S06K3L T6L1 NQ featuring trench and double diffusion structure Images

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