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P channel MOSFET HUASHUO HSL6115 featuring super low gate charge and excellent CdVdt effect decline

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P channel MOSFET HUASHUO HSL6115 featuring super low gate charge and excellent CdVdt effect decline

Drain to Source Voltage : 60V

Current - Continuous Drain(Id) : 19A

Operating Temperature - : -55℃~+150℃@(Tj)

RDS(on) : 24mΩ@10V,10A

Gate Threshold Voltage (Vgs(th)) : 1.7V@250uA

Reverse Transfer Capacitance (Crss@Vds) : 141pF@15V

Number : 1 P-Channel

Input Capacitance(Ciss) : 3.635nF@15V

Pd - Power Dissipation : 2W

Gate Charge(Qg) : 25nC@4.5V

Description : P-Channel 60V 19A 2W Surface Mount SOT-223

Mfr. Part # : HSL6115

Model Number : HSL6115

Package : SOT-223

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Product Overview

The HSL6115 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent R_DS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and features a super low gate charge with excellent CdV/dt effect decline. Its advanced high cell density trench technology ensures reliable performance.

Product Attributes

Brand: HSL
Product Type: P-Ch MOSFET
Technology: Trench
Certifications: RoHS, Green Product
Reliability: 100% EAS guaranteed

Technical Specifications

Model	Parameter	Conditions	Min.	Typ.	Max.	Units
HSL6115	Drain-Source Voltage (VDS)	-	-	-	-60	V
	Gate-Source Voltage (VGS)	-	-	-	±20	V
	Continuous Drain Current (ID) @ TC=25 (-VGS @ -10V)	-	-	-19	-	A
	Continuous Drain Current (ID) @ TC=70 (-VGS @ -10V)	-	-	-15	-	A
	Continuous Drain Current (ID) @ TA=25 (-VGS @ -10V)	-	-	-7.2	-	A
	Continuous Drain Current (ID) @ TA=70 (-VGS @ -10V)	-	-	-5.7	-	A
	Pulsed Drain Current (IDM)	-	-	-55	-	A
	Single Pulse Avalanche Energy (EAS)	-	113	-	mJ
	Avalanche Current (IAS)	-	-47.6	-	A
	Total Power Dissipation (PD) @ TA=25	-	-	2	-	W
	Storage Temperature Range (TSTG)	-	-55	-	150
	Operating Junction Temperature Range (TJ)	-	-55	-	150
HSL6115	Drain-Source Breakdown Voltage (BVDSS)	VGS=0V , ID=-250uA	-60	-	-	V
	Static Drain-Source On-Resistance (RDS(ON),max)	VGS=-10V , ID=-10A	-	24	28	m
	Static Drain-Source On-Resistance (RDS(ON),max)	VGS=-4.5V , ID=-8A	-	31	36	m
	Gate Threshold Voltage (VGS(th))	VGS=VDS , ID =-250uA	-1.0	-1.7	-2.5	V
	Drain-Source Leakage Current (IDSS)	VDS=-48V , VGS=0V , TJ=25	-	-	1	uA
	Gate-Source Leakage Current (IGSS)	VGS=±20V , VDS=0V	-	-	±100	nA
	Total Gate Charge (Qg) (-4.5V)	VDS=-20V , VGS=-4.5V , ID=-10A	-	25	-	nC
	Input Capacitance (Ciss)	VDS=-15V , VGS=0V , f=1MHz	-	3635	-	pF
	Output Capacitance (Coss)	-	-	-	224	-	pF
	Reverse Transfer Capacitance (Crss)	-	-	-	141	-	pF
HSL6115	Continuous Source Current (IS)	VG=VD=0V , Force Current	-	-	-19	A
HSL6115	Diode Forward Voltage (VSD)	VGS=0V , IS=-1A , TJ=25	-	-	-1	V

Model	Package Code	Packaging	Quantity
HSL6115	SOT-223	3000/Tape&Reel	3000

2504101957_HUASHUO-HSL6115_C45385110.pdf

P channel MOSFET HUASHUO HSL6115 featuring super low gate charge and excellent CdVdt effect decline Images

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