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N Channel Trench MOSFET HUASHUO HSP6016A Suitable for Synchronous Buck Converters and Power Circuits

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N Channel Trench MOSFET HUASHUO HSP6016A Suitable for Synchronous Buck Converters and Power Circuits

Drain to Source Voltage : 60V

Current - Continuous Drain(Id) : 60A

Operating Temperature - : -55℃~+150℃

RDS(on) : 9mΩ@10V,30A

Gate Threshold Voltage (Vgs(th)) : 2V

Reverse Transfer Capacitance (Crss@Vds) : 167pF@15V

Number : 1 N-channel

Input Capacitance(Ciss) : 2.188nF@15V

Pd - Power Dissipation : 86.8W

Gate Charge(Qg) : 33nC@4.5V

Description : N-Channel 60V 60A 86.8W Through Hole TO-220

Mfr. Part # : HSP6016A

Model Number : HSP6016A

Package : TO-220

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Product Overview

The HSP6016A is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent R_DS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product Attributes

Brand: HS-Semi
Product Line: HSP6016A
Technology: Trench MOSFET
Certifications: RoHS, Green Product
Reliability: 100% EAS Guaranteed

Technical Specifications

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
VDS	Drain-Source Voltage				60	V
VGS	Gate-Source Voltage				±20	V
ID@TC=25	Continuous Drain Current, VGS @ 10V¹				60	A
ID@TC=100	Continuous Drain Current, VGS @ 10V¹				38	A
ID@TA=25	Continuous Drain Current, VGS @ 10V¹				9.2	A
ID@TA=70	Continuous Drain Current, VGS @ 10V¹				7.5	A
IDM	Pulsed Drain Current²				135	A
EAS	Single Pulse Avalanche Energy³				73	mJ
IAS	Avalanche Current				38	A
PD@TC=25	Total Power Dissipation⁴				86.8	W
PD@TA=25	Total Power Dissipation⁴				2	W
TSTG	Storage Temperature Range		-55		150
TJ	Operating Junction Temperature Range		-55		150
Thermal Data
RJA	Thermal Resistance Junction-Ambient¹			---	62	/W
RJC	Thermal Resistance Junction-Case¹			---	1.44	/W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	60	---	---	V
BVDSS/TJ	BVDSS Temperature Coefficient	Reference to 25 , ID=1mA		0.052	---	V/
RDS(ON)	Static Drain-Source On-Resistance²	VGS=10V , ID=30A		9	12	m
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	2	---	5	V
VGS(th)	VGS(th) Temperature Coefficient			-5.76	---	mV/
IDSS	Drain-Source Leakage Current	VDS=48V , VGS=0V , TJ=25		---	1	uA
IDSS	Drain-Source Leakage Current	VDS=48V , VGS=0V , TJ=55		---	5	uA
IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V		---	±100	nA
gfs	Forward Transconductance	VDS=5V , ID=30A		42	---	S
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz		1.5	---
Qg	Total Gate Charge (4.5V)	VDS=48V , VGS=4.5V , ID=15A		33	---	nC
Qgs	Gate-Source Charge			10.5	---
Qgd	Gate-Drain Charge			9.9	---
Td(on)	Turn-On Delay Time	VDD=30V , VGS=10V , RG=3.3, ID=15A		10.4	---	ns
Tr	Rise Time			9.2	---	ns
Td(off)	Turn-Off Delay Time			63	---	ns
Tf	Fall Time			4.8	---	ns
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz		2188	---	pF
Coss	Output Capacitance			260	---	pF
Crss	Reverse Transfer Capacitance			167	---	pF
Diode Characteristics
IS	Continuous Source Current^1,5	VG=VD=0V , Force Current		---	60	A
ISM	Pulsed Source Current^2,5			---	135	A
VSD	Diode Forward Voltage²	VGS=0V , IS=A , TJ=25		---	1.2	V
trr	Reverse Recovery Time	IF=15A , dI/dt=100A/s , TJ=25		18	---	nS
Qrr	Reverse Recovery Charge			14	---	nC

2410121503_HUASHUO-HSP6016A_C5341703.pdf

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