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Fast Switching P Channel MOSFET HUASHUO HSU0139 Offering Excellent CdV dt Effect and RoHS Compliance

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Fast Switching P Channel MOSFET HUASHUO HSU0139 Offering Excellent CdV dt Effect and RoHS Compliance

Drain to Source Voltage : 100V

Current - Continuous Drain(Id) : 30A

Operating Temperature - : -55℃~+150℃

RDS(on) : 50mΩ@10V,10A

Gate Threshold Voltage (Vgs(th)) : -

Reverse Transfer Capacitance (Crss@Vds) : 125pF@25V

Number : 1 P-Channel

Input Capacitance(Ciss) : 6.516nF@25V

Pd - Power Dissipation : 102W

Gate Charge(Qg) : 92nC@10V

Description : P-Channel 100V 30A 102W Surface Mount TO-252

Mfr. Part # : HSU0139

Model Number : HSU0139

Package : TO-252

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Product Overview

The HSU0139 is a P-Channel 100V Fast Switching MOSFET designed with advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for a wide variety of applications and meets RoHS and Green Product requirements. The device is 100% EAS guaranteed with full function reliability approved, offering super low gate charge and excellent CdV/dt effect decline.

Product Attributes

  • Brand: H-SMEI
  • Product Type: P-Channel MOSFET
  • Technology: Advanced Trench MOSFET
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Units
Absolute Maximum Ratings
VDS Drain-Source Voltage -100 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ -10V -30 A
ID@TC=100 Continuous Drain Current, VGS @ -10V -19 A
IDM Pulsed Drain Current -100 A
EAS Single Pulse Avalanche Energy 185 mJ
IAS Avalanche Current -28 A
PD@TC=25 Total Power Dissipation 102 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient --- 62 /W
RJC Thermal Resistance Junction-Case --- 1.2 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -100 --- --- V
RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-30A 42 50 m
VGS=-4.5V , ID=-8A 46 55 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -1.8 -2.5 V
IDSS Drain-Source Leakage Current VDS=-100V , VGS=0V , TJ=25 --- -50 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- 100 nA
gfs Forward Transconductance VDS=-10V , ID=-10A 32 --- S
Qg Total Gate Charge VDS=-80V , VGS=-10V , ID=-14A 92 --- nC
Qgs Gate-Source Charge 17.5 ---
Qgd Gate-Drain Charge 14 ---
Td(on) Turn-On Delay Time VDD=-50V , VGS=-10V , RG=3.3, ID=-14A 20.5 --- ns
Tr Rise Time 32.2 --- ns
Td(off) Turn-Off Delay Time 123 --- ns
Tf Fall Time 63.7 --- ns
Ciss Input Capacitance VDS=-25V , VGS=0V , f=1MHz 6516 --- pF
Coss Output Capacitance 223 --- pF
Crss Reverse Transfer Capacitance 125 --- pF
Diode Characteristics
IS Continuous Source Current VG=VD=0V , Force Current --- -30 A
VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25 --- 1.2 V
trr Reverse Recovery Time IF=-14A , di/dt=-100A/s , TJ=25 31.2 --- ns
Qrr Reverse Recovery Charge 31.97 --- nC

2410121642_HUASHUO-HSU0139_C701018.pdf
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