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HYG022N10NS1TA MOSFET Featuring 100 Volt Drain Source Voltage and 2.2 Milliohm Typical On Resistance

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HYG022N10NS1TA MOSFET Featuring 100 Volt Drain Source Voltage and 2.2 Milliohm Typical On Resistance

Drain to Source Voltage : 100V

Current - Continuous Drain(Id) : 249A

Operating Temperature - : -55℃~+175℃

RDS(on) : 2.8mΩ@10V

Gate Threshold Voltage (Vgs(th)) : -

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 186.6pF

Number : 1 N-channel

Output Capacitance(Coss) : 3.51nF

Pd - Power Dissipation : 312W

Input Capacitance(Ciss) : 9.026nF

Gate Charge(Qg) : 160.5nC@10V

Description : N-Channel 100V 249A 312W Surface Mount TOLL

Mfr. Part # : HYG022N10NS1TA

Model Number : HYG022N10NS1TA

Package : TOLL

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Product Overview

The HYG022N10NS1TA is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for switching applications and power management in inverter and battery management systems. It features a high voltage rating of 100V and a continuous drain current of 249A, with a low on-state resistance of 2.2 m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available (RoHS Compliant).

Product Attributes

Brand: Hymexa
Model: HYG022N10NS1TA
Certifications: RoHS Compliant, Halogen-Free Available
Package Type: TOLL

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ.	Max	Unit
Absolute Maximum Ratings
Drain-Source Voltage	VDSS	Tc=25C Unless Otherwise Noted	-	-	100	V
Gate-Source Voltage	VGSS	-	-	±20	V
Junction Temperature Range	TJ	-	-55	-	175	°C
Storage Temperature Range	TSTG	-	-55	-	175	°C
Source Current-Continuous(Body Diode)	IS	Tc=25C, Mounted on Large Heat Sink	-	-	249	A
Pulsed Drain Current	IDM	Tc=25C	-	-	710	A
Continuous Drain Current	ID	Tc=25C	-	-	249	A
Continuous Drain Current	ID	Tc=100C	-	-	176	A
Maximum Power Dissipation	PD	Tc=25C	-	-	312	W
Maximum Power Dissipation	PD	Tc=100C	-	-	156	W
Thermal Resistance, Junction-to-Case	RθJC	-	-	0.48	°C/W
Thermal Resistance, Junction-to-Ambient	RθJA	Surface mounted on 1in² FR-4 board	-	45	°C/W
Single Pulsed-Avalanche Energy	EAS	L=0.3mH, Limited by TJ max , starting TJ=25°C, L = 0.3mH, RG= 2.5Ω, VGS =10V	-	1337	mJ
Electrical Characteristics (Tc =25°C Unless Otherwise Noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V,IDS= 250µA	100	-	-	V
Drain-to-Source Leakage Current	IDSS	VDS=100V,VGS=0V	-	-	1	µA
Drain-to-Source Leakage Current	IDSS	TJ=125°C	-	-	50	µA
Gate Threshold Voltage	VGS(th)	VDS=VGS, IDS= 250µA	2	3.1	4	V
Gate-Source Leakage Current	IGSS	VGS=±20V,VDS=0V	-	-	±100	nA
Drain-Source On-State Resistance	RDS(ON)	VGS= 10V,IDS=50A	-	2.2	2.8	mΩ
Diode Forward Voltage	VSD	ISD=50A,VGS=0V	-	0.83	1.3	V
Reverse Recovery Time	trr	ISD=50A,dISD/dt=100A/µs	-	93.3	-	ns
Reverse Recovery Charge	Qrr	-	-	239	-	nC
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
Gate Resistance	RG	VGS=0V,VDS=0V,F=1MHz	-	2.3	-	Ω
Input Capacitance	Ciss	VGS=0V, VDS= 25V, Frequency=1MHz	-	9026	-	pF
Output Capacitance	Coss	-	-	3510	-	pF
Reverse Transfer Capacitance	Crss	-	-	186.6	-	pF
Turn-on Delay Time	td(ON)	VDD= 50V,RG=2.5Ω, IDS= 50A,VGS= 10V	-	27	-	ns
Turn-on Rise Time	Tr	-	-	101	-	ns
Turn-off Delay Time	td(OFF)	-	-	91	-	ns
Turn-off Fall Time	Tf	-	-	99	-	ns
Gate Charge Characteristics
Total Gate Charge	Qg	VDS =80V, VGS=10V,IDS=50A (VGS=10V)	-	160.5	-	nC
Gate-Source Charge	Qgs	-	-	51	-	nC
Gate-Drain Charge	Qgd	-	-	44	-	nC

2409302203_HUAYI-HYG022N10NS1TA_C2925050.pdf

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