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Low RDS on N Channel MOSFET High Diode 2N7002K ideal for load switching and DC DC converter circuits

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Low RDS on N Channel MOSFET High Diode 2N7002K ideal for load switching and DC DC converter circuits

Drain to Source Voltage : 60V

Current - Continuous Drain(Id) : 340mA

Operating Temperature - : -

RDS(on) : 5.3Ω@4.5V,200mA

Gate Threshold Voltage (Vgs(th)) : 2.5V

Reverse Transfer Capacitance (Crss@Vds) : 10pF

Number : 1 N-channel

Input Capacitance(Ciss) : 40pF

Pd - Power Dissipation : 350mW

Gate Charge(Qg) : 30nC@10V

Description : N-Channel 60V 340mA 0.35W Surface Mount SOT-23

Mfr. Part # : 2N7002K

Model Number : 2N7002K

Package : SOT-23

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Product Overview

The 2N7002K is a high-density, N-Channel MOSFET designed for voltage-controlled small signal switching applications. It features a low RDS(on), high saturation current capability, and is rugged and reliable. This MOSFET is ESD protected and suitable for load switching in portable devices and DC/DC converters.

Product Attributes

Brand: High Diode Semiconductor
Product Type: N-Channel MOSFET
Marking: 2N7002K
Package: SOT-23 Plastic-Encapsulated

Technical Specifications

Symbol	Parameter	Test Condition	Min	Type	Max	Unit
V(BR)DSS	Drain-source breakdown voltage	VGS = 0V, ID =250A			60	V
IDSS	Zero gate voltage drain current	VDS =48V,VGS = 0V		1	uA
IGSS1	Gate-body leakage current	VGS =20V, VDS = 0V			10	A
IGSS2	Gate-body leakage current	VGS =10V, VDS = 0V			200	nA
IGSS2	Gate-body leakage current	VGS =5V, VDS = 0V			100	nA
VGS(th)	Gate threshold voltage*	VDS =VGS, ID =250A	1	1.4	2.5	V
RDS(on)	Drain-source on-resistance*	VGS =10V, ID =500mA		1.3	5
RDS(on)	Drain-source on-resistance*	VGS =4.5V, ID =200mA		1.4	5.3
Qr	Recovered charge	VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/S		30	nC
Ciss	Input Capacitance	VDS=10V,VGS=0V,f=1MHz		40	pF
Coss	Output Capacitance			30	pF
Crss	Reverse Transfer Capacitance			10	pF
td(on)	Turn-on delay time	VGS=10 V, VDD=50V, RG=50 RGS=50,RL=250		10	ns
td(off)	Turn-off delay time			15	ns
trr	Reverse recovery Time	VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/S		30	nC
VSD	Diode Forward voltage	VGS =0V, IS=300mA		0.97	1.5	V
BVGSO	Gate-Source Breakdown Voltage	IGS=1mA(Open Drain)	21.5	30	V
VDS	Drain-Source voltage				60	V
ID	Drain Current				340	mA
PD	Power Dissipation				0.35	W
TJ	Junction Temperature				150
Tstg	Storage Temperature		-55		+150
RJA	Thermal Resistance from Junction to Ambient			357	/W
VGS	Gate-Source voltage				20	V

2410121317_High-Diode-2N7002K_C466661.pdf

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