| Absolute Maximum Ratings |
| Drain-Source Voltage | VDSS | | | | 600 | V |
| Drain Current - Continuous (Tc=25C) | ID | | | | 5.0* | A |
| Drain Current - Continuous (Tc=100C) | ID | | | | 3.1* | A |
| Drain Current - Pulsed (Note1) | IDM | | | | 20* | A |
| Gate-Source Voltage | VGSS | | | 30 | | V |
| Single Pulsed Avalanche Energy (Note2) | EAS | | | 245 | | mJ |
| Avalanche Current (Note1) | IAR | | | 5.0 | | A |
| Repetitive Avalanche Energy (Note1) | EAR | | | 10.5 | | mJ |
| Peak Diode Recovery dv/dt (Note3) | dv/dt | | | 4.5 | | V/ns |
| Power Dissipation (TC =25C) | PD | | | | 35 | W |
| Derate above 25C | | | | 0.27 | | W/C |
| Operating Junction Temperature | Tj | | -55 | | 150 | C |
| Storage Temperature Range | Tstg | | -55 | | +150 | C |
| Thermal Characteristics |
| Thermal Resistance, Junction to Case | RJC | | | | 3.57 | C /W |
| Thermal Resistance, Junction to Ambient | RJA | | | | 62.5 | C /W |
| Off Characteristics |
| Drain-source Breakdown Voltage | BVDSS | VGS=0V ,ID=250A | 600 | -- | -- | V |
| Breakdown Voltage Temperature Coefficient | BVDSS /TJ | ID=250A (Referenced to 25C) | -- | 0.65 | -- | V/C |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V | -- | -- | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=480V,Tc=125C | -- | -- | 10 | A |
| Gate-Body Leakage Current, Forward | IGSSF | VGS=+30V, VDS=0V | -- | -- | 100 | nA |
| Gate-Body Leakage Current, Reverse | IGSSR | VGS=-30V, VDS=0V | -- | -- | -100 | nA |
| On Characteristics |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 2.0 | -- | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10 V, ID=2.5A | -- | 1.9 | 2.5 | |
| Forward Transconductance | gFS | VDS=40 V, ID=2.0A (Note4) | -- | 3.6 | -- | S |
| Dynamic Characteristics |
| Input Capacitance | Ciss | VDS=25V,VGS=0V, f=1.0MHz | -- | 568 | -- | pF |
| Output Capacitance | Coss | | -- | 63 | -- | pF |
| Reverse Transfer Capacitance | Crss | | -- | 11 | -- | pF |
| Switching Characteristics |
| Turn-On Delay Time | td(on) | VDD = 300 V, ID = 5.0 A, RG = 25 (Note4,5) | -- | 31 | -- | ns |
| Turn-On Rise Time | tr | | -- | 76 | -- | ns |
| Turn-Off Delay Time | td(off) | | -- | 61 | -- | ns |
| Turn-Off Fall Time | tf | | -- | 56 | -- | ns |
| Total Gate Charge | Qg | VDS = 480 V, ID =5.0 A, VGS = 10 V (Note4,5) | -- | 13 | -- | nC |
| Gate-Source Charge | Qgs | | -- | 4.1 | -- | nC |
| Gate-Drain Charge | Qgd | | -- | 4.9 | -- | nC |
| Drain-Source Diode Characteristics and Maximum Ratings |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | -- | -- | 5.0 | A |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | -- | -- | 20 | A |
| Drain-Source Diode Forward Voltage | VSD | VGS =0V,IS=4.0A | -- | -- | 1.4 | V |
| Reverse Recovery Time | trr | VGS =0V, IS=4.0A, d IF /dt=100A/s (Note4) | -- | 332 | -- | ns |
| Reverse Recovery Charge | Qrr | | -- | 2.69 | -- | C |
