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650V N Channel Super Junction Power MOSFET HUAKE HCF65R1K0 for High Frequency Switching Applications

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650V N Channel Super Junction Power MOSFET HUAKE HCF65R1K0 for High Frequency Switching Applications

Drain to Source Voltage : 650V

Current - Continuous Drain(Id) : 4A

RDS(on) : 800mΩ@10V,2A

Gate Threshold Voltage (Vgs(th)) : 4V@250uA

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 9.2pF

Number : 1 N-channel

Output Capacitance(Coss) : 370pF

Input Capacitance(Ciss) : 330pF

Pd - Power Dissipation : 26W

Gate Charge(Qg) : 10.2nC@10V

Description : N-Channel 650V 4A 26W Through Hole TO-220F

Mfr. Part # : HCF65R1K0

Model Number : HCF65R1K0

Package : TO-220F

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Product Overview

The HCF65R1K0 is a 650V N-Channel Super Junction Power MOSFET from HUAKE semiconductors. It offers features such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability. This MOSFET is designed for high-frequency switching mode power supplies and active power factor correction applications.

Product Attributes

Brand: HUAKE semiconductors
Product Code: HCF65R1K0
Version: 1.0

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings
V_DSS	Drain-Source Voltage				650	V
I_D	Drain Current - Continuous (T_C=25°C)				4.0*	A
I_D	Drain Current - Continuous (T_C=100°C)				2.53*	A
I_DM	Drain Current - Pulsed (Note1)				16*	A
V_GSS	Gate-Source Voltage			±30		V
E_AS	Single Pulsed Avalanche Energy (Limit Reference Value) (Note2)				39.6	mJ
I_AR	Avalanche Current (Note1)				2.0	A
E_AR	Repetitive Avalanche Energy (Note1)				2.7	mJ
dv/dt	Peak Diode Recovery dv/dt (Note3)				8.5	V/ns
P_D	Power Dissipation (T_C =25°C)				26	W
P_D	Derate above 25°C				0.21	W/°C
T_j	Operating Junction Temperature				150	°C
T_stg	Storage Temperature Range		-55		+150	°C
Thermal Characteristics
R_θJC	Thermal Resistance, Junction to Case				4.81	°C /W
R_θJA	Thermal Resistance, Junction to Ambient				80	°C /W
Electrical Characteristics

Off Characteristics
B_VDSS	Drain-source Breakdown Voltage	V_GS=0V ,I_D=250μA	650			V
ΔB_VDSS /ΔT_J	Breakdown Voltage Temperature Coefficient	I_D=250μA (Referenced to 25°C)		0.70		V/°C
I_DSS	Zero Gate Voltage Drain Current	V_DS=650V,V_GS=0V			1	μA
I_DSS	Zero Gate Voltage Drain Current	V_DS=520V,T_C=125°C			10	μA
I_GSSF	Gate-Body Leakage Current,Forward	V_GS=+30V, V_DS=0V			100	nA
I_GSSF	Gate-Body Leakage Current,Forward	V_GS=-30V, V_DS=0V			-100	nA
On Characteristics
V_GS(th)	Gate Threshold Voltage	V_DS= V_GS, I_D=250μA	2.0		4.0	V
R_DS(on)	Static Drain-Source On-Resistance	V_GS=10 V, I_D=2.0A		800	1000	mΩ
g_FS	Forward Transconductance	V_DS=20 V, I_D=2.0A (Note4)		2.5		S
Dynamic Characteristics
C_iss	Input Capacitance	V_DS=25V,V_GS=0V, f=1.0MHz		330		pF
C_oss	Output Capacitance			370		pF
C_rss	Reverse Transfer Capacitance			9.2		pF
Switching Characteristics
t_d(on)	Turn-On Delay Time	V_DD = 325 V, I_D = 4.0 A, R_G = 25 Ω (Note4,5)		5.9		ns
t_r	Turn-On Rise Time			3.1		ns
t_d(off)	Turn-Off Delay Time			48		ns
t_f	Turn-Off Fall Time			8.9		ns
Q_g	Total Gate Charge	V_DS = 520 V, I_D =4.0 A, V_GS = 10 V (Note4,5)		10.2		nC
Q_gs	Gate-Source Charge			1.7		nC
Q_gd	Gate-Drain Charge			4.1		nC
Drain-Source Diode Characteristics and Maximum Ratings
I_S	Maximum Continuous Drain-Source Diode Forward Current				4.0	A
I_SM	Maximum Pulsed Drain-Source Diode Forward Current				16	A
V_SD	Drain-Source Diode Forward Voltage	V_GS =0V,I_S=4.0A			1.4	V
t_rr	Reverse Recovery Time	V_GS =0V, I_S=4.0A, d I_F /dt=100A/μs (Note4)		308		ns
Q_rr	Reverse Recovery Charge			2.33		μC

2410121937_HUAKE-HCF65R1K0_C19725796.pdf

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