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600V N Channel MOSFET HUAKE SMF8N60 optimized for switching mode power supplies and power factor correction

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600V N Channel MOSFET HUAKE SMF8N60 optimized for switching mode power supplies and power factor correction

Drain to Source Voltage : 600V

Current - Continuous Drain(Id) : 8A

Operating Temperature - : -55℃~+150℃

RDS(on) : 1Ω@10V,4A

Gate Threshold Voltage (Vgs(th)) : 4V

Reverse Transfer Capacitance (Crss@Vds) : 16pF@25V

Number : 1 N-channel

Input Capacitance(Ciss) : 1.4nF@25V

Pd - Power Dissipation : 51W

Gate Charge(Qg) : 31nC@10V

Description : 600V 8A 1Ω@10V,4A 4V 1 N-channel 51W TO-220F-3 Single FETs, MOSFETs RoHS

Mfr. Part # : SMF8N60

Model Number : SMF8N60

Package : TO-220F-3

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Product Overview

The SMF8N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering efficient and reliable performance.

Product Attributes

Brand: HUAKE semiconductors
Product Type: N-Channel MOSFET
Model: SMF8N60
Package: TO-220F

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings
V_DSS	Drain-Source Voltage				600	V
I_D	Drain Current - Continuous (Tc=25°C)				8.0*	A
I_D	Drain Current - Continuous (Tc=100°C)				5.1*	A
I_DM	Drain Current - Pulsed (Note1)				32*	A
V_GSS	Gate-Source Voltage				±30	V
E_AS	Single Pulsed Avalanche Energy (Note2)				600	mJ
I_AR	Avalanche Current (Note1)				8.0	A
E_AR	Repetitive Avalanche Energy (Note1)				15.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note3)				4.5	V/ns
P_D	Power Dissipation(TC =25°C)				51	W
P_D	Derate above 25°C				0.41	W/°C
T_j	Operating Junction Temperature				150	°C
T_stg	Storage Temperature Range		-55		+150	°C
Thermal Characteristics
R_θJC	Thermal Resistance,Junction to Case				2.44	°C /W
R_θJA	Thermal Resistance,Junction to Ambient				62.5	°C /W
Off Characteristics
B_VDSS	Drain-source Breakdown Voltage	V_GS=0V ,I_D=250μA	600			V
ΔB_VDSS /ΔT_J	Breakdown Voltage Temperature Coefficient	I_D=250μA (Referenced to 25°C)		0.7		V/°C
I_DSS	Zero Gate Voltage Drain Current	V_DS=600V,V_GS=0V			1	μA
I_DSS	Zero Gate Voltage Drain Current	V_DS=480V,T_C=125°C			10	μA
I_GSSF	Gate-Body Leakage Current,Forward	V_GS=+30V, V_DS=0V			100	nA
I_GSSR	Gate-Body Leakage Current,Reverse	V_GS=-30V, V_DS=0V			-100	nA
On Characteristics
V_GS(th)	Gate Threshold Voltage	V_DS= V_GS, I_D=250μA	2.0		4.0	V
R_DS(on)	Static Drain-Source On-Resistance	V_GS=10 V, I_D=4.0A		1.0	1.2	Ω
g_FS	Forward Transconductance	V_DS=40 V, I_D=4.0A (Note4)		7		S
Dynamic Characteristics
C_iss	Input Capacitance	V_DS=25V,V_GS=0V, f=1.0MHz		1400		pF
C_oss	Output Capacitance			175		pF
C_rss	Reverse Transfer Capacitance			16		pF
Switching Characteristics
t_d(on)	Turn-On Delay Time	V_DD = 300 V, I_D = 8.0 A, R_G = 25 Ω (Note4,5)		13.5		ns
t_r	Turn-On Rise Time			105		ns
t_d(off)	Turn-Off Delay Time			128		ns
t_f	Turn-Off Fall Time			49		ns
Q_g	Total Gate Charge	V_DS = 480 V, I_D =8.0 A, V_GS = 10 V (Note4,5)		31		nC
Q_gs	Gate-Source Charge			6.5		nC
Q_gd	Gate-Drain Charge			14.7		nC
Drain-Source Diode Characteristics and Maximum Ratings
I_S	Maximum Continuous Drain-Source Diode Forward Current				8.0	A
I_SM	Maximum Pulsed Drain-Source Diode Forward Current				32	A
V_SD	Drain-Source Diode Forward Voltage	V_GS =0V,I_S=8.0A			1.4	V
t_rr	Reverse Recovery Time	V_GS =0V, I_S=8.0A, d I_F/dt=100A/μs (Note4)		325		ns
Q_rr	Reverse Recovery Charge			2.7		μC

2411220228_HUAKE-SMF8N60_C570138.pdf

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