Home > Single FETs, MOSFETs >

High cell density trench technology P channel mosfet HUASHUO HSM4435 with 30 volt rating and low gate charge

Product Categories

Bipolar Transistor Arrays [120]
Bridge Rectifiers [1296]
JFETs [73]
Single Bipolar Transistors [2284]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [536]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1334]
SCRs [158]
SCRs - Modules [48]
TRIACs [535]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]
Single FETs, MOSFETs [3000]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

High cell density trench technology P channel mosfet HUASHUO HSM4435 with 30 volt rating and low gate charge

Drain to Source Voltage : 30V

Current - Continuous Drain(Id) : 9.5A

RDS(on) : 20mΩ@10V

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 2.5V@250uA

Type : P-Channel

Reverse Transfer Capacitance (Crss@Vds) : 158pF

Number : 1 P-Channel

Output Capacitance(Coss) : 194pF

Pd - Power Dissipation : 3.1W

Input Capacitance(Ciss) : 1.345nF

Gate Charge(Qg) : 12.6nC@4.5V

Description : P-Channel 30V 9.5A 3.1W Surface Mount SOP-8

Mfr. Part # : HSM4435

Model Number : HSM4435

Package : SOP-8

Contact Now

Product Overview

The HSM4435 is a P-channel, 30V fast-switching MOSFET designed with high cell density trench technology. It offers excellent R_DS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include 100% EAS guaranteed, Green Device availability, super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product Attributes

Brand: HS-Semi
Product Type: P-Ch MOSFETs
Certifications: RoHS, Green Product
Reliability: 100% EAS Guaranteed, Full Function Reliability Approved

Technical Specifications

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
V_DS	Drain-Source Voltage				-30	V
V_GS	Gate-Source Voltage				20	V
I_D@T_A=25	Continuous Drain Current, V_GS @ -10V¹				-9.5	A
I_D@T_A=70	Continuous Drain Current, V_GS @ -10V¹				-7.6	A
I_DM	Pulsed Drain Current²				-50	A
E_AS	Single Pulse Avalanche Energy³				72.2	mJ
I_AS	Avalanche Current				-38	A
P_D@T_A=25	Total Power Dissipation⁴				3.1	W
P_D@T_A=70	Total Power Dissipation⁴				2	W
T_STG	Storage Temperature Range		-55		150
T_J	Operating Junction Temperature Range		-55		150
Thermal Data
R_JA	Thermal Resistance Junction-Ambient¹				75	/W
R_JA	Thermal Resistance Junction-Ambient¹(t10s)				40	/W
R_JC	Thermal Resistance Junction-Case¹				24	/W
V_DS			-30			V
R_DS(ON),typ				18		m
I_D				-9.5		A
Electrical Characteristics (T_J=25 , unless otherwise noted)
B_VDSS	Drain-Source Breakdown Voltage	V_GS=0V , I_D=-250uA	-30			V
B_VDSS/T_J	B_VDSS Temperature Coefficient	Reference to 25 , I_D=-1mA		-0.022		V/
R_DS(ON)	Static Drain-Source On-Resistance²	V_GS=-10V , I_D=-6A		18	20	m
		V_GS=-4.5V , I_D=-4A		27	32	m
V_GS(th)	Gate Threshold Voltage	V_GS=V_DS , I_D =-250uA	-1.0		-2.5	V
V_GS(th)	V_GS(th) Temperature Coefficient			4.6		mV/
I_DSS	Drain-Source Leakage Current	V_DS=-24V , V_GS=0V , T_J=25			-1	uA
		V_DS=-24V , V_GS=0V , T_J=55			-5	uA
I_GSS	Gate-Source Leakage Current	V_GS=20V , V_DS=0V			100	nA
g_fs	Forward Transconductance	V_DS=-5V , I_D=-6A		17		S
R_g	Gate Resistance	V_DS=0V , V_GS=0V , f=1MHz		13
Q_g	Total Gate Charge (-4.5V)	V_DS=-15V , V_GS=-4.5V , I_D=-6A		12.6		nC
Q_gs	Gate-Source Charge			4.8
Q_gd	Gate-Drain Charge			4.8
t_d(on)	Turn-On Delay Time	V_DD=-15V , V_GS=-10V , R_G=3.3, I_D=-6A		4.6		ns
t_r	Rise Time			14.8		ns
t_d(off)	Turn-Off Delay Time			41		ns
t_f	Fall Time			19.6		ns
C_iss	Input Capacitance	V_DS=-15V , V_GS=0V , f=1MHz		1345		pF
C_oss	Output Capacitance			194		pF
C_rss	Reverse Transfer Capacitance			158		pF
Diode Characteristics
I_S	Continuous Source Current^1,5	V_G=V_D=0V , Force Current			-9.5	A
I_SM	Pulsed Source Current^2,5				-50	A
V_SD	Diode Forward Voltage²	V_GS=0V , I_S=-1A , T_J=25			-1.2	V
t_rr	Reverse Recovery Time	I_F=-6A , dI/dt=100A/s , T_J=25		16.3		nS
Q_rr	Reverse Recovery Charge			5.9		nC
Ordering Information
Part Number	Package code	Packaging
HSM4435	SOP-8	4000/Tape&Reel

Notes:
¹ The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
² The data tested by pulsed, pulse width 300us, duty cycle 2%.
³ The EAS data shows Max. rating. The test condition is V_DD=-25V, V_GS=-10V, L=0.1mH, I_AS=-38A.
⁴ The power dissipation is limited by 150 junction temperature.
⁵ The data is theoretically the same as I_D and I_DM, in real applications, should be limited by total power dissipation.

2410121455_HUASHUO-HSM4435_C2908112.pdf

High cell density trench technology P channel mosfet HUASHUO HSM4435 with 30 volt rating and low gate charge Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!