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Trench technology p channel mosfet HUASHUO HSK5P10 100 volt fast switching device ideal for switching

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Trench technology p channel mosfet HUASHUO HSK5P10 100 volt fast switching device ideal for switching

Drain to Source Voltage : 100V

Current - Continuous Drain(Id) : 5A

Operating Temperature - : -55℃~+150℃

RDS(on) : 330mΩ@10V

Gate Threshold Voltage (Vgs(th)) : 3V@250uA

Type : P-Channel

Reverse Transfer Capacitance (Crss@Vds) : 23pF@50V

Number : 1 P-Channel

Input Capacitance(Ciss) : 990pF@50V

Pd - Power Dissipation : 1.7W

Gate Charge(Qg) : 15nC@10V

Description : P-Channel 100V 5A 1.7W Surface Mount SOT-89

Mfr. Part # : HSK5P10

Model Number : HSK5P10

Package : SOT-89

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Product Overview

The HSK5P10 is a P-channel, 100V fast switching MOSFET featuring high cell density trench technology. It offers excellent R_DS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and is available in a SOT-89 package. Key advantages include super low gate charge, excellent C_dv/dt effect decline, and advanced high cell density trench technology.

Product Attributes

Brand: HS
Product Type: P-Channel MOSFET
Technology: Trench
Certifications: RoHS, Green Product
Packaging: 1000/Tape&Reel

Technical Specifications

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
V_DS	Drain-Source Voltage				-100	V
V_GS	Gate-Source Voltage				±20	V
I_D@T_A=25	Continuous Drain Current, V_GS @ -10V¹				-5	A
I_D@T_A=70	Continuous Drain Current, V_GS @ -10V¹				-3.5	A
I_DM	Pulsed Drain Current²				-20	A
P_D@T_A=25	Total Power Dissipation³				1.7	W
T_STG	Storage Temperature Range		-55		150
T_J	Operating Junction Temperature Range		-55		150
Thermal Data
R_JA	Thermal Resistance Junction-ambient¹				80	/W
R_JC	Thermal Resistance Junction-Case¹				50	/W
Electrical Characteristics (T_J=25 , unless otherwise noted)
BVDSS	Drain-Source Breakdown Voltage	V_GS=0V , I_D=-250uA	-100			V
ΔBVDSS/ΔT_J	BVDSS Temperature Coefficient	Reference to 25, I_D=-1mA		-0.0624		V/
R_DS(ON)	Static Drain-Source On-Resistance²	V_GS=-10V , I_D=-5A		280	330	m
		V_GS=-4.5V , I_D=-3A		290	360	m
V_GS(th)	Gate Threshold Voltage	V_GS=V_DS , I_D =-250uA	-1.0	-2.0	-3.0	V
ΔV_GS(th)/ΔT_J	V_GS(th) Temperature Coefficient			4.5		mV/
I_DSS	Drain-Source Leakage Current	V_DS=-100V , V_GS=0V , T_J=25			1	uA
		V_DS=-100V , V_GS=0V , T_J=55			10	uA
I_GSS	Gate-Source Leakage Current	V_GS=±20V , V_DS=0V			±100	nA
Q_g	Total Gate Charge	V_DS=-50V , V_GS=-10V , I_D=-2A		15		nC
Q_gs	Gate-Source Charge			5.4		nC
Q_gd	Gate-Drain Charge			4		nC
t_d(on)	Turn-On Delay Time	V_DD=-50V , V_GS=-10V , R_G=3.3 I_D=-1A		14		ns
t_r	Rise Time			3.7		ns
t_d(off)	Turn-Off Delay Time			34		ns
t_f	Fall Time			6		ns
C_iss	Input Capacitance	V_DS=-50V , V_GS=0V , f=1MHz		990		pF
C_oss	Output Capacitance			38		pF
C_rss	Reverse Transfer Capacitance			23		pF
Diode Characteristics
I_S	Continuous Source Current^1,4	V_G=V_D=0V , Force Current			-5	A
I_SM	Pulsed Source Current^2,4				-20	A
V_SD	Diode Forward Voltage²	V_GS=0V , I_S=-1A , T_J=25			-1.2	V

Notes:

1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤300us, duty cycle ≤2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as I_D and I_DM, in real applications, should be limited by total power dissipation.

Ordering Information:

Part Number	Package code	Packaging
HSK5P10	SOT-89	1000/Tape&Reel

2410122017_HUASHUO-HSK5P10_C28314511.pdf

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