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N Channel MOSFET HUASHUO HSBA4054 40V Fast Switching Device for Or ing and Synchronous Rectification

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N Channel MOSFET HUASHUO HSBA4054 40V Fast Switching Device for Or ing and Synchronous Rectification

Drain to Source Voltage : 40V

Current - Continuous Drain(Id) : 49A

Operating Temperature - : -55℃~+150℃

RDS(on) : 10.5mΩ@4.5V

Gate Threshold Voltage (Vgs(th)) : 2.2V@250uA

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 48pF

Number : 1 N-channel

Output Capacitance(Coss) : 493pF

Input Capacitance(Ciss) : 950pF

Pd - Power Dissipation : 22W

Gate Charge(Qg) : 20nC@10V

Description : N-Channel 40V 49A 22W PRPAK5x6-8L

Mfr. Part # : HSBA4054

Model Number : HSBA4054

Package : PRPAK5x6-8L

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Product Overview

The HSBA4054 is a N-Channel 40V Fast Switching MOSFET designed with Advanced Trench Technology. It offers low gate charge and is 100% UIS Tested, making it suitable for high-efficiency applications. Key benefits include fast switching capabilities and robust performance. This MOSFET is ideal for Synchronous Rectification in SMPS, DC/DC Converters, and Or-ing applications.

Product Attributes

Brand: HS-Semi
Technology: Advanced Trench Technology
Testing: 100% UIS Tested

Technical Specifications

Model	Parameter	Conditions	Min.	Typ.	Max.	Units
HSBA4054	Drain-Source Voltage (VDS)				40	V
	Gate-Source Voltage (VGS)				20	V
	Continuous Drain Current (ID@TC=25)				49	A
	Continuous Drain Current (ID@TC=100)				29	A
	Pulsed Drain Current (IDM)				90	A
	Single Pulse Avalanche Energy (EAS)				68	mJ
	Avalanche Current (IAS)				37	A
	Total Power Dissipation (PD@TC=25)				22	W
	Storage Temperature Range (TSTG)		-55		150
	Operating Junction Temperature Range (TJ)		-55		150
	Thermal Resistance Junction-ambient (RJA)	(Steady State)			---	65	/W
	Thermal Resistance Junction-Case (RJC)				---	6	/W
	Drain-Source Breakdown Voltage (BVDSS)	VGS=0V , ID=250uA	40		---	---	V
HSBA4054	Static Drain-Source On-Resistance (RDS(ON))	VGS=10V , ID=15A		4.7	6.5	m
HSBA4054		VGS=4.5V , ID=15A			7.5	10.5	m
HSBA4054	Gate Threshold Voltage (VGS(th))	VGS=VDS , ID =250uA	1.2	1.9	2.2	V
HSBA4054	Drain-Source Leakage Current (IDSS)	VDS=32V , VGS=0V , TJ=25		---	---	1	uA
HSBA4054		VDS=32V , VGS=0V , TJ=55		---	5	uA
HSBA4054	Gate-Source Leakage Current (IGSS)	VGS=20V , VDS=0V		---	100	nA
HSBA4054	Gate Resistance (Rg)	VDS=0V , VGS=0V , f=1MHz		1.9	---
HSBA4054	Total Gate Charge (Qg)	VDS=20V , VGS=10V , ID=15A		20	---	nC
	Gate-Source Charge (Qgs)			3.5	---		nC
	Gate-Drain Charge (Qgd)			4.2	---		nC
HSBA4054	Turn-On Delay Time (Td(on))	VDD=20V , VGS=10V , RG=3 , ID=15A		12	---	ns
	Rise Time (Tr)			9.6	---		ns
	Turn-Off Delay Time (Td(off))			21	---		ns
	Fall Time (Tf)			16	---		ns
HSBA4054	Input Capacitance (Ciss)	VDS=20V , VGS=0V , f=1MHz		950	---	pF
	Output Capacitance (Coss)			493	---		pF
	Reverse Transfer Capacitance (Crss)			48	---		pF
HSBA4054	Continuous Source Current (IS)	VG=VD=0V , Force Current		---	45	A
HSBA4054	Diode Forward Voltage (VSD)	VGS=0V , IS=1A , TJ=25		---	1.2	V

Notes:

1. Data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2. Data tested by pulsed, pulse width 300s, duty cycle 2%.
3. EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.1mH, IAS=37A.
4. Power dissipation is limited by 150 junction temperature.
5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.

Ordering Information

Part Number	Package Code	Packaging
HSBA4054	PRPAK5*6	3000/Tape&Reel

2410121452_HUASHUO-HSBA4054_C22359239.pdf

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