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N Channel Enhancement Mode MOSFET HUAYI HYG180N10LS1C2 with 46A continuous drain current and RoHS compliant design

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N Channel Enhancement Mode MOSFET HUAYI HYG180N10LS1C2 with 46A continuous drain current and RoHS compliant design

Drain to Source Voltage : 100V

Current - Continuous Drain(Id) : 46A

Operating Temperature - : -55℃~+175℃

RDS(on) : 16.5mΩ@10V,20A

Gate Threshold Voltage (Vgs(th)) : 2V

Reverse Transfer Capacitance (Crss@Vds) : 21.9pF@25V

Number : 1 N-channel

Pd - Power Dissipation : 83.3W

Input Capacitance(Ciss) : 1.548nF

Gate Charge(Qg) : 23.8nC@10V

Description : N-Channel 100V 46A 83.3W Surface Mount PDFN-8(5x6)

Mfr. Part # : HYG180N10LS1C2

Model Number : HYG180N10LS1C2

Package : PDFN-8(5x6)

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HYG180N10LS1C2 N-Channel Enhancement Mode MOSFET

The HYG180N10LS1C2 is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a low on-resistance of 16.5m (typ.) at VGS = 10V and 20m (typ.) at VGS = 6V, a 100V drain-source voltage, and 46A continuous drain current. This device is 100% avalanche tested, reliable, and rugged, with halogen-free and green options available (RoHS Compliant). It is particularly suitable for high-frequency synchronous buck converters.

Product Attributes

Brand: HYG (Huayi Microelectronics Co., Ltd.)
Package Type: PDFN8L (5x6)
Certifications: RoHS Compliant, Halogen-Free and Green Devices Available
Material: Lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish.

Technical Specifications

Parameter	Test Conditions	Rating	Unit
Absolute Maximum Ratings
Drain-Source Voltage (VDSS)		100	V
Gate-Source Voltage (VGSS)		±20	V
Maximum Junction Temperature (TJ)		-55 to 175	°C
Storage Temperature Range (TSTG)		-55 to 175	°C
Source Current-Continuous (IS) (Body Diode, Tc=25°C, Mounted on Large Heat Sink)		46	A
Pulsed Drain Current (IDM) (Tc=25°C)	*	130	A
Continuous Drain Current (ID) (Tc=25°C)		46	A
Continuous Drain Current (ID) (Tc=100°C)		32.5	A
Maximum Power Dissipation (PD) (Tc=25°C)		83.3	W
Maximum Power Dissipation (PD) (Tc=100°C)		41.6	W
Thermal Resistance, Junction-to-Case (RθJC)		1.8	°C/W
Thermal Resistance, Junction-to-Ambient (RθJA)	**	47	°C/W
Single Pulsed-Avalanche Energy (EAS) (L=0.3mH)	***	65.75	mJ
Electrical Characteristics
Drain-Source Breakdown Voltage (BVDSS)	VGS=0V, IDS=250µA	100	V
Drain-to-Source Leakage Current (IDSS)	VDS=100V, VGS=0V	-	1.0 µA
Drain-to-Source Leakage Current (IDSS)	TJ=125°C	-	50 µA
Gate Threshold Voltage (VGS(th))	VDS=VGS, IDS=250µA	1 / 2 / 3	V
Gate-Source Leakage Current (IGSS)	VGS=±20V, VDS=0V	-	±100 nA
Drain-Source On-State Resistance (RDS(ON))	VGS=10V, IDS=20A	- / 16.5 / 21	mΩ
Drain-Source On-State Resistance (RDS(ON))	VGS=6V, IDS=20A	- / 20 / 26	mΩ
Diode Forward Voltage (VSD)	ISD=20A, VGS=0V	- / 0.92 / 1.3	V
Reverse Recovery Time (trr)	ISD=20A, dISD/dt=100A/µs	- / 51.6 / -	ns
Reverse Recovery Charge (Qrr)		- / 84.4 / -	nC
Gate Resistance (RG)	VGS=0V, VDS=0V, F=1MHz	- / 1.9 / -	Ω
Input Capacitance (Ciss)	VGS=0V, VDS=25V, Frequency=1.0MHz	- / 1548 / -	pF
Output Capacitance (Coss)		- / 449.2 / -	pF
Reverse Transfer Capacitance (Crss)		- / 21.9 / -	pF
Turn-on Delay Time (td(ON))	VDD=50V, RG=2.5Ω, IDS=20A, VGS=10V	- / 10.5 / -	ns
Turn-on Rise Time (Tr)		- / 24 / -	ns
Turn-off Delay Time (td(OFF))		- / 20.6 / -	ns
Turn-off Fall Time (Tf)		- / 4.8 / -	ns
Total Gate Charge (Qg)	VDS=80V, VGS=10V, ID=20A	- / 23.8 / -	nC
Gate-Source Charge (Qgs)		- / 7.6 / -	nC
Gate-Drain Charge (Qgd)		- / 3.6 / -	nC

2409302230_HUAYI-HYG180N10LS1C2_C5121300.pdf

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