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power management component JSCJ CJL8810 dual n channel MOSFET designed for load switching and protection

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power management component JSCJ CJL8810 dual n channel MOSFET designed for load switching and protection

Drain to Source Voltage : 20V

Current - Continuous Drain(Id) : 7A

Operating Temperature - : -55℃~+150℃

RDS(on) : 28mΩ@1.8V,7A

Gate Threshold Voltage (Vgs(th)) : 1V

Reverse Transfer Capacitance (Crss@Vds) : 145pF@10V

Number : 2 N-Channel

Input Capacitance(Ciss) : 1.15nF@10V

Pd - Power Dissipation : 714mW

Gate Charge(Qg) : 15nC@10V

Description : N-Channel Array 20V 7A 714mW Surface Mount SOT-23-6L

Mfr. Part # : CJL8810

Model Number : CJL8810

Package : SOT-23-6L

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Product Overview

The CJL8810 is a Dual N-Channel MOSFET utilizing advanced trench technology to achieve excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for use as a uni-directional or bi-directional load switch due to its common-drain configuration. This device is ideal for applications requiring efficient load switching.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Marking: L8810
Package: SOT-23-6L

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Drain-source breakdown voltage	V(BR)DSS	VGS = 0V, ID =250A			20	V
Zero gate voltage drain current	IDSS	VDS =16V,VGS = 0V			1	A
Gate-body leakage current	IGSS	VGS =4.5V, VDS = 0V			1	A
Gate-body leakage current	IGSS	VGS =10V, VDS = 0V			5	A
Gate threshold voltage	VGS(th)	VDS =VGS, ID =250A	0.4		1	V
Drain-source on-resistance	RDS(on)	VGS =10V, ID =3A		20		m
Drain-source on-resistance	RDS(on)	VGS =4.5V, ID =3A		22		m
Drain-source on-resistance	RDS(on)	VGS =3.8V, ID =3A		24		m
Drain-source on-resistance	RDS(on)	VGS =2.5V, ID =3A		26		m
Drain-source on-resistance	RDS(on)	VGS =1.8V, ID =3A		35		m
Forward tranconductance	gFS	VDS =5V, ID =7A		9		S
Diode forward voltage	VSD	IS=1A, VGS = 0V			1	V
Input Capacitance	Ciss	VDS =10V,VGS =0V,f =1MHz		1150		pF
Output Capacitance	Coss	VDS =10V,VGS =0V,f =1MHz		185		pF
Reverse Transfer Capacitance	Crss	VDS =10V,VGS =0V,f =1MHz		145		pF
Total gate charge	Qg	VDS =10V,VGS =4.5V,ID =7A		15		nC
Gate-source charge	Qgs	VDS =10V,VGS =4.5V,ID =7A		0.8		nC
Gate-drain charge	Qg d	VDS =10V,VGS =4.5V,ID =7A		3.2		nC
Turn-on delay time	td(on)	VGS=5V,VDD=10V, RL=1.35,RGEN=3		6		ns
Turn-on rise time	tr	VGS=5V,VDD=10V, RL=1.35,RGEN=3		13		ns
Turn-off delay time	td(off)	VGS=5V,VDD=10V, RL=1.35,RGEN=3		52		ns
Turn-off fall time	tf	VGS=5V,VDD=10V, RL=1.35,RGEN=3		16		ns
Continuous Drain Current	ID	Ta=25			7	A
Pulsed Drain Current	IDM	Ta=25			30	A
Power Dissipation	PD	Ta=25, mounted on 1 in2 FR-4 board			714	mW
Thermal Resistance from Junction to Ambient	RJA	Ta=25, mounted on 1 in2 FR-4 board			175	/W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		+150
Lead Temperature for Soldering Purposes	TL	(1/8 from case for 10 s)			260

2410121917_JSCJ-CJL8810_C504153.pdf

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