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600V N channel VDmosfet Jingdao Microelectronics F10N60L with 30V gate source voltage and halogen free material

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600V N channel VDmosfet Jingdao Microelectronics F10N60L with 30V gate source voltage and halogen free material

Drain to Source Voltage : 600V

Current - Continuous Drain(Id) : 10A

RDS(on) : 1Ω@10V,5A

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 4V

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 11pF

Output Capacitance(Coss) : 143pF

Pd - Power Dissipation : 50W

Input Capacitance(Ciss) : 1.643nF@25V

Gate Charge(Qg) : 19nC@10V

Description : N-Channel 600V 10A 50W Through Hole TO-220F-3L

Mfr. Part # : F10N60L

Model Number : F10N60L

Package : TO-220F-3L

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Product Overview

These N-channel enhanced VDmosfets, obtained by self-aligned planar technology, reduce conduction loss, improve switching performance, and enhance avalanche energy. They are compliant with RoHS standards.

Product Attributes

Brand: Jingdao Microelectronics co.LTD
Origin: Shandong, China
Certifications: RoHS compliant, UL flammability classification 94V-0, Halogen-free
Case Material: Green molding compound

Technical Specifications

Parameter	Symbol	Rating	Unit	Condition
Absolute Maximum Ratings
Drain-Source Voltage	VDSS	600	V	Ta=25C, Unless Otherwise Specified
Gate-Source Voltage	VGSS	30	V	Ta=25C, Unless Otherwise Specified
Continuous Drain Current	ID	10	A	Tc=25C
Pulsed Drain Current	IDM	40	A	Note 2
Avalanche Energy Single Pulsed	EAS	700	mJ	Note 3
Power Dissipation	PD	50	W	Tc = 25C
Operating junction and storage temperature	TJ,TSTG	-55 ~+150	C
Thermal Resistance
Junction Case	RthJC	4	C/W	Tc=25C
Junction Case	RthJC	63	C/W	Tc=100C
Junction Ambient(min. footprint)	RthJA		C/W
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	600	V	ID=0.25mA, VGS=0V
Gate-Source Leakage Current	IGSS	10	nA	VGS=30V,VDS=0V
Static Drain-Source On-State Resistance	RDS(ON)	1.0		VGS=10V,ID=5A
Drain-Source Leakage Current	IDSS	1.0	uA	VDS=600V,VGS=0V
Gate Threshold Voltage	VGS(TH)	2.0	V	VDS=VGS,ID=250uA
Forward Transfer Conductance	gfs	5.0	S	VDS=15V,ID=5A
Input Capacitance	CISS	1643	pF	VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance	CRSS	143	pF
Output Capacitance	COSS	11	pF
Total Gate Charge	QG	2.6	nC	VDD=480V,VGS=10V, ID=10A,IG=1mA (NOTE1,2)
Gate-Source Charge	QGS		nC
Gate-Drain Charge	QGD		nC
Turn-On Delay Time	tD(ON)	19	ns	VDD=300V,VGS=10V, ID=10A,RG=25 (NOTE1,2)
Turn-On Rise Time	tR	6.3	ns
Turn-Off Delay Time	tD(OFF)	6.6	ns
Turn-Off Fall Time	tF	33	ns
Body-Diode Continuous Current	IS	10	A
Body-Diode Forward Voltage	VSD	1.4	V	IS=10A,VGS=0V
Reverse Recovery Time	trr	425	ns	IS=10A,VGS=0V, di/dt=100A/us
Reverse Recovery Charge	Qrr	4.3	uC	VGS=30V,VDS=0V

2305040947_Jingdao-Microelectronics-F10N60L_C5632441.pdf

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