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High Density Cell Design JSCJ CJAB35N03S Plastic Encapsulated Mosfet with Excellent Heat Dissipation

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High Density Cell Design JSCJ CJAB35N03S Plastic Encapsulated Mosfet with Excellent Heat Dissipation

Drain to Source Voltage : 30V

Current - Continuous Drain(Id) : 35A

RDS(on) : 10mΩ@4.5V,10A

Operating Temperature - : -

Gate Threshold Voltage (Vgs(th)) : 2.5V@250uA

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 143pF

Number : 1 N-channel

Output Capacitance(Coss) : 174pF

Input Capacitance(Ciss) : 1.1nF

Pd - Power Dissipation : 25W

Gate Charge(Qg) : 24nC@10V

Description : N-Channel 30V 35A 25W PDFNWB3.3x3.3-8L

Mfr. Part # : CJAB35N03S

Model Number : CJAB35N03S

Package : PDFNWB3.3x3.3-8L

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Product Overview

The CJAB35N03S is a Plastic-Encapsulated MOSFET utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. Its high-density cell design offers ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current with good stability and uniformity. The excellent package design ensures good heat dissipation, making it suitable for high-side switching in POL DC/DC converters and secondary-side synchronous rectification.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Part Number: CJAB35N03S
Package Type: PDFNWB3.33.3-8L
Marking: CJAB35N03S

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Off Characteristics
Drain-source breakdown voltage	V(BR)DSS	VGS = 0V, ID =250uA	30			V
Gate-body leakage current	IGSS	VDS =0V, VGS =20V			100	nA
Zero gate voltage drain current	IDSS	VDS =24V, VGS =0V		1.0		A
On Characteristics
Gate-threshold voltage	VGS(th)	VDS =VGS, ID =250uA	2.5			V
Static drain-source on-sate resistance	RDS(on)	VGS =4.5V, ID =10A		7.5		m
Static drain-source on-sate resistance	RDS(on)	VGS =10V, ID =10A		5.2	6.8	m
Dynamic Characteristics
Input capacitance	Ciss	VDS =15V,VGS =0V, f =1MHz		1100		pF
Output capacitance	Coss			174
Reverse transfer capacitance	Crss			143
Switching Characteristics
Total gate charge	Qg	VGS=10V, VDS=15V, ID=10A		24		nC
Gate-source charge	Qgs			2.6
Gate-drain charge	Qgd			5.4
Turn-on delay time	td(on)	VDS=15V,ID=11A VGS=10V,RG=10		10		ns
Turn-on rise time	tr			25
Turn-off delay time	td(off)			40
Turn-off fall time	tf			90
Drain-Source Diode Characteristics
Drain-source diode forward voltage	VSD	VGS =0V, IS=12A		1.2		V
Continuous drain-source diode forward current	IS			35		A
Pulsed drain-source diode forward current	ISM			120		A
Absolute Maximum Ratings
Parameter	Symbol	Value	Unit
Drain-Source Voltage	VDS	30	V
Gate-Source Voltage	VGS	20	V
Continuous Drain Current	ID	35	A
Pulsed Drain Current	IDM	120	A
Single Pulsed Avalanche Energy	EAS	83.3	mJ
Maximum Power Dissipation	PD	25	W
Thermal Resistance from Junction to Ambient	RJA	50	/W
Thermal Resistance from Junction to Case	RJC	5.0	/W
Operating Junction and Storage Temperature Range	TJ ,Tstg	-55~+150

2410121908_JSCJ-CJAB35N03S_C19267720.pdf

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