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Compact DFN1006 3L Package P Channel MOSFET JSCJ CJBA3139K for Logic Level Shifting and Load Control

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Compact DFN1006 3L Package P Channel MOSFET JSCJ CJBA3139K for Logic Level Shifting and Load Control

Drain to Source Voltage : 20V

Current - Continuous Drain(Id) : 660mA

Operating Temperature - : -55℃~+150℃

RDS(on) : 520mΩ@4.5V

Gate Threshold Voltage (Vgs(th)) : 350mV

Reverse Transfer Capacitance (Crss@Vds) : 9pF

Number : 1 P-Channel

Input Capacitance(Ciss) : 113pF

Pd - Power Dissipation : 100mW

Gate Charge(Qg) : -

Description : P-Channel 20V 0.66A 100mW Surface Mount DFN-3L(1x0.6)

Mfr. Part # : CJBA3139K

Model Number : CJBA3139K

Package : DFN-3L(1x0.6)

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Product Overview

The CJBA3139K is a P-Channel MOSFET in a DFN1006-3L package, designed for surface mounting. It features low RDS(on), operates at low logic level gate drive, and includes ESD protection for the gate. This product is lead-free and suitable for various load and power switching applications, interfacing, battery management for ultra-small portable electronics, and logic level shifting.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Product Type: P-Channel MOSFET
Package: DFN1006-3L
Material: Plastic-Encapsulate
Certifications: Lead Free Product is Acquired

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	V(BR)DSS	VGS = 0V, ID =-250A	-20			V
Zero Gate Voltage Drain Current	IDSS	VDS =-20V,VGS = 0V			-1	A
Gate-Body Leakage Current	IGSS	VGS =10V, VDS = 0V			20	uA
Gate Threshold Voltage	VGS(th)	VDS =VGS, ID =-250A	-0.35	-1.1		V
Drain-Source On-Resistance	RDS(on)	VGS =-4.5V, ID =-1A			520	m
Drain-Source On-Resistance	RDS(on)	VGS =-2.5V, ID =-0.8A			780	m
Drain-Source On-Resistance	RDS(on)	VGS =-1.8V, ID =-0.5A		950		m
Forward Transconductance	gFS	VDS =-10V, ID =-0.54A	1.2			S
Diode Forward Voltage	VSD	IS = -0.5A, VGS = 0V		-1.2		V
Input Capacitance	Ciss	VDS =-16V,VGS =0V,f =1MHz		113		pF
Output Capacitance	Coss	VDS =-16V,VGS =0V,f =1MHz		15		pF
Reverse Transfer Capacitance	Crss	VDS =-16V,VGS =0V,f =1MHz		9		pF
Turn-on Delay Time	td(on)	VDD=-4.5V,VGS=-10V, ID=-200mA,RGEN=10		9		ns
Turn-on Rise Time	tr	VDD=-4.5V,VGS=-10V, ID=-200mA,RGEN=10		5.7		ns
Turn-off Delay Time	td(off)	VDD=-4.5V,VGS=-10V, ID=-200mA,RGEN=10		32.6		ns
Turn-off Fall Time	tf	VDD=-4.5V,VGS=-10V, ID=-200mA,RGEN=10		20.3		ns

2410121848_JSCJ-CJBA3139K_C504099.pdf

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