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220MF package N channel MOSFET Jilin Sino Microelectronics JCS5N65FB 220MF with low Crss typical 9pF

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220MF package N channel MOSFET Jilin Sino Microelectronics JCS5N65FB 220MF with low Crss typical 9pF

Drain to Source Voltage : 650V

Current - Continuous Drain(Id) : 4A

Operating Temperature - : -55℃~+150℃

RDS(on) : 2.4Ω@10V

Gate Threshold Voltage (Vgs(th)) : 4V@250uA

Reverse Transfer Capacitance (Crss@Vds) : 12pF

Number : -

Output Capacitance(Coss) : 124pF

Input Capacitance(Ciss) : 642pF

Pd - Power Dissipation : 33W

Gate Charge(Qg) : 19nC@10V

Description : 650V 4A 2.4Ω@10V 4V@250uA 33W TO-220F-3 Single FETs, MOSFETs RoHS

Mfr. Part # : JCS5N65FB-220MF

Model Number : JCS5N65FB-220MF

Package : TO-220F-3

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Product Overview

The JCS5N65FB is an N-channel MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS systems. It features low gate charge, low Crss (typical 9pF), fast switching speeds, and is 100% avalanche tested with improved dv/dt capability. This RoHS-compliant product is available in a TO-220MF package.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd.
Package: TO-220MF
Certifications: RoHS
Flame-retardant grade: UL94-V0

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Drain-Source Voltage	VDSS	650	V
Continuous Drain Current (Tc=25)	ID	4.0*	A	*Drain current limited by maximum junction temperature
Continuous Drain Current (Tc=100)	ID	2.5*	A	*Drain current limited by maximum junction temperature
Pulse Drain Current	IDM	16*	A	Note 1
Gate-Source Voltage	VGSS	30	V
Single Pulsed Avalanche Energy	EAS	240	mJ	Note 2
Avalanche Current	IAR	4.0	A	Note 1
Repetitive Avalanche Energy	EAR	10.0	mJ	Note 1
Peak Diode Recovery dv/dt	dv/dt	5.5	V/ns	Note 3
Power Dissipation (Tc=25)	PD	33	W
Derate above 25		0.26	W/
Operating and Storage Temperature Range	TJ, TSTG	-55+150
Maximum Lead Temperature for Soldering Purposes	TL	300
Gate Threshold Voltage	VGS(th)	2.0 - 4.0	V	VDS = VGS , ID=250A
Static Drain-Source On-Resistance	RDS(ON)	- 1.7 - 2.4		VGS =10V , ID=2A
Forward Transconductance	gfs	- 4.7	S	VDS = 40V , ID=2A (note 4)
Input Capacitance	Ciss	- 490 - 642	pF	VDS=25V, VGS =0V, f=1.0MHZ
Output Capacitance	Coss	- 95 - 124	pF	VDS=25V, VGS =0V, f=1.0MHZ
Reverse Transfer Capacitance	Crss	- 9 - 12	pF	VDS=25V, VGS =0V, f=1.0MHZ
Total Gate Charge	Qg	- 13.3 - 19	nC	VDS =520V , ID=4A VGS =10V (note 4,5)
Drain-Source Diode Forward Voltage	VSD	- - 1.4	V	VGS=0V, IS=4.0A
Reverse recovery time	trr	- 330 -	ns	VGS=0V, IS=4.0A dIF/dt=100A/s (note 4)
Reverse recovery charge	Qrr	- 2.67 -	C	VGS=0V, IS=4.0A dIF/dt=100A/s (note 4)
Thermal Resistance, Junction to Case	Rth(j-c)	3.79	/W
Thermal Resistance, Junction to Ambient	Rth(j-A)	62.5	/W

2411201842_Jilin-Sino-Microelectronics-JCS5N65FB-220MF_C272595.pdf

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