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N channel MOSFET 7A 600V Jilin Sino Microelectronics JCS7HN60FC 220MF with enhanced dv dt and low Crss

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N channel MOSFET 7A 600V Jilin Sino Microelectronics JCS7HN60FC 220MF with enhanced dv dt and low Crss

Drain to Source Voltage : 600V

Current - Continuous Drain(Id) : 7A

Operating Temperature - : -55℃~+150℃

RDS(on) : 1.3Ω@10V

Gate Threshold Voltage (Vgs(th)) : 4V@250uA

Reverse Transfer Capacitance (Crss@Vds) : 20pF

Number : 1 N-channel

Output Capacitance(Coss) : 300pF

Input Capacitance(Ciss) : 1.6nF

Pd - Power Dissipation : 30.2W

Description : 600V 7A 1.3Ω@10V 4V@250uA 1 N-channel 30.2W TO-220F-3 Single FETs, MOSFETs RoHS

Mfr. Part # : JCS7HN60FC-220MF

Model Number : JCS7HN60FC-220MF

Package : TO-220F-3

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Product Overview

The JCS7HN60C is a 600V, 7.0A N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and LED power supplies. It features low gate charge, low Crss (typical 14pF), fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd.
Certifications: RoHS

Technical Specifications

Order Code	Marking	Package	ID (A)	VDSS (V)	Rds(on)-max (@Vgs=10V) ()	Qg-typ (nC)
JCS7HN60VC-V-B / JCS7HN60VC-V-BR	N/A	IPAK	7.0	600	1.3	32
JCS7HN60RC-R-B / JCS7HN60RC-R-BR / JCS7HN60RC-R-A / JCS7HN60RC-R-AR	N/A	DPAK	7.0	600	1.3	32
JCS7HN60BC-B-B / JCS7HN60BC-B-BR	N/A	TO-262	7.0	600	1.3	32
JCS7HN60SC-S-B / JCS7HN60SC-S-BR / JCS7HN60SC-S-A / JCS7HN60SC-S-AR	N/A	TO-263	7.0	600	1.3	32
JCS7HN60CC-C-B / JCS7HN60CC-C-BR	N/A	TO-220C	7.0	600	1.3	32
JCS7HN60FC-F-B / JCS7HN60FC-F-BR	N/A	TO-220MF	7.0	600	1.3	32
JCS7HN60FC-F2-B / JCS7HN60FC-F2-BR	N/A	TO-220MF-K2	7.0	600	1.3	32

Absolute Maximum Ratings

Parameter	Symbol	Value	Unit	Package
Drain-Source Voltage	VDSS	600	V	JCS7HN60 CC/SC/BC/VC/RC, JCS7HN60FC, JCS7HN60F C-K2
Drain Current -continuous (Tc=25)	ID	7.0*	A	JCS7HN60 CC/SC/BC/VC/RC, JCS7HN60FC, JCS7HN60F C-K2
Drain Current -continuous (Tc=100)	ID	4.6*	A	JCS7HN60 CC/SC/BC/VC/RC, JCS7HN60FC, JCS7HN60F C-K2
Drain Current - pulse (note 1)	IDM	28*	A	JCS7HN60 CC/SC/BC/VC/RC, JCS7HN60FC, JCS7HN60F C-K2
Gate-Source Voltage	VGSS	30	V	All
Single Pulsed Avalanche Energy (note 2)	EAS	420	mJ	All
Avalanche Current (note 1)	IAR	7.0	A	All
Repetitive Avalanche Energy (note 1)	EAR	12.8	mJ	All
Peak Diode Recovery dv/dt (note 3)	dv/dt	4.5	V/ns	All
Power Dissipation (TC=25)	PD	120 / 30.2	W	JCS7HN60 CC/SC/BC/VC/RC / JCS7HN60FC
Power Dissipation (TC=25)	PD	0.24	W	JCS7HN60F C-K2
Operating and Storage Temperature Range	TJ, TSTG	-55+150		All
Maximum Lead Temperature for Soldering Purposes	TL	300		All

Electrical Characteristics

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	BVDSS	ID=250A, VGS=0V	600	-	-	V
Breakdown Voltage Temperature Coefficient	BVDSS/ TJ	ID=250A, referenced to 25	-	0.59	-	V/
Zero Gate Voltage Drain Current	IDSS	VDS=600V,VGS=0V, TC=25	-	-	10	A
Zero Gate Voltage Drain Current	IDSS	VDS=480V, TC=125	-	-	100	A
Gate-body leakage current, forward	IGSSF	VDS=0V, VGS =30V	-	-	100	nA
Gate-body leakage current, reverse	IGSSR	VDS=0V, VGS =-30V	-	-	-100	nA
Gate Threshold Voltage	VGS(th)	VDS = VGS , ID=250A	2.0	-	4.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V , ID=3.5A	0.5	1.0	1.3
Static Drain-Source On-Resistance (@100)	RDS(ON)	VGS =10V , ID=3.5A	0.5	1.75	3.5
Static Drain-Source On-Resistance (@150)	RDS(ON)	VGS =10V , ID=3.5A	0.5	2.6	6
Forward Transconductance	gfs	VDS = 40V, ID=7.0Anote 4	-	5.6	-	S
Gate resistance	Rg	F=1.0MHZ open drain	-	1.0	4.0
Input capacitance	Ciss	VDS=25V,VGS =0V, f=1.0MHZ	-	1100	1600	pF
Output capacitance	Coss	VDS=25V,VGS =0V, f=1.0MHZ	-	251	300	pF
Reverse transfer capacitance	Crss	VDS=25V,VGS =0V, f=1.0MHZ	-	14	20	pF
Turn-On delay time	td(on)	VDD=300V,ID=7A,RG=25 note 45	-	11	31	ns
Turn-On rise time	tr	VDD=300V,ID=7A,RG=25 note 45	-	35	80	ns
Turn-Off delay time	td(off)	VDD=300V,ID=7A,RG=25 note 45	-	46	95	ns
Turn-Off Fall time	tf	VDD=300V,ID=7A,RG=25 note 45	-	40	92	ns
Total Gate Charge	Qg	VDS =480V , ID=7A VGS =10V note 45	-	32	60	nC
Gate-Source charge	Qgs	VDS =480V , ID=7A VGS =10V note 45	-	6	15	nC
Gate-Drain charge	Qgd	VDS =480V , ID=7A VGS =10V note 45	-	15	32	nC
Maximum Continuous Drain -Source Diode Forward Current	IS	-	-	-	7.0	A
Maximum Pulsed Drain-Source Diode Forward Current	ISM	-	-	-	28	A
Drain-Source Diode Forward Voltage	VSD	VGS=0V, IS=7.0A	-	-	1.4	V
Reverse recovery time	trr	VGS=0V, IS=7.0A dIF/dt=100A/s (note 4)	-	345	700	ns
Reverse recovery charge	Qrr	VGS=0V, IS=7.0A dIF/dt=100A/s (note 4)	-	3.2	6.4	C

Thermal Characteristics

Parameter	Symbol	Max	Unit	Package
Thermal Resistance, Junction to Case	Rth(j-c)	1.04	/W	JCS7HN60VC/ RC/CC/SC/BC
Thermal Resistance, Junction to Case	Rth(j-c)	3.2	/W	JCS7HN60FC TO-220MF
Thermal Resistance, Junction to Case	Rth(j-c)	4.16	/W	JCS7HN60FC TO-220MF- K2
Thermal Resistance, Junction to Ambient	Rth(j-A)	62.5	/W	JCS7HN60VC/ RC/CC/SC/BC
Thermal Resistance, Junction to Ambient	Rth(j-A)	62.5	/W	JCS7HN60FC TO-220MF
Thermal Resistance, Junction to Ambient	Rth(j-A)	62.5	/W	JCS7HN60FC TO-220MF- K2

2411201840_Jilin-Sino-Microelectronics-JCS7HN60FC-220MF_C272542.pdf

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