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High Reliability 60V N Channel MOSFET JingYang 2N7002KWX with Voltage Controlled Switching Capability

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High Reliability 60V N Channel MOSFET JingYang 2N7002KWX with Voltage Controlled Switching Capability

Drain to Source Voltage : 60V

Current - Continuous Drain(Id) : 340mA

RDS(on) : 5Ω@10V,500mA

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 1.4V

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 10pF@10V

Number : 1 N-channel

Output Capacitance(Coss) : 30pF

Input Capacitance(Ciss) : 40pF@10V

Pd - Power Dissipation : 150mW

Description : N-Channel 60V 340mA 150mW Surface Mount SOT-323

Mfr. Part # : 2N7002KWX

Model Number : 2N7002KWX

Package : SOT-323

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Product Overview

The 2N7002KWX is a 60V N-Channel MOSFET featuring a high-density cell design for low RDS(on). It functions as a voltage-controlled small signal switch with high saturation current capability and ESD protection (2KV HBM). Its rugged and reliable design makes it suitable for load switching in portable devices and DC/DC converters.

Product Attributes

Brand: JY Electronics
Origin: China
Package: SOT-323
Marking: 2N7002KWX

Technical Specifications

Parameter	Symbol	Test Condition	Min	Type	Max	Unit
Drain-Source Breakdown Voltage	V(BR)DSS	VGS = 0V, ID =250A	60			V
Zero Gate Voltage Drain Current	IDSS	VDS =48V,VGS = 0V			1	A
Gate-Body Leakage Current	IGSS	VGS =20V, VDS = 0V			10	A
Gate Threshold Voltage	VGS(th)	VDS =VGS, ID =250A	1	1.4	2.5	V
Drain-Source On-Resistance	RDS(on)	VGS =4.5V, ID =200mA		1.4	5.3
Drain-Source On-Resistance	RDS(on)	VGS =10V, ID =500mA		1.3	5
Diode Forward Voltage	VSD	VGS=0V, IS=300mA			1.5	V
Recovered Charge	Qr	VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/s			30	nC
Input Capacitance	Ciss	VDS =10V,VGS =0V,f =1MHz		40		pF
Output Capacitance	Coss	VDS =10V,VGS =0V,f =1MHz		30		pF
Reverse Transfer Capacitance	Crss	VDS =10V,VGS =0V,f =1MHz		10		pF
Turn-on Delay Time	td(on)	VGS=10V,VDD=50V,RG=50, RGS=50, RL=250		10		ns
Turn-off Delay Time	td(off)	VGS=10V,VDD=50V,RG=50, RGS=50, RL=250		15		ns
Reverse Recovery Time	tf	VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/s		30		ns
Gate-Source Breakdown Voltage	BVGSO	Igs=1mA (Open Drain)	21.5		30	V

2409302231_JingYang-2N7002KWX_C7434075.pdf

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