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loss P channel MOSFET for portable device power management JingYang JY2301AX featuring copper leadframe construction

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loss P channel MOSFET for portable device power management JingYang JY2301AX featuring copper leadframe construction

Drain to Source Voltage : 20V

Current - Continuous Drain(Id) : 2.4A

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 500mV

Reverse Transfer Capacitance (Crss@Vds) : 37.6pF@6V

Number : 1 P-Channel

Pd - Power Dissipation : 1.25W

Input Capacitance(Ciss) : 660.8pF@6V

Description : P-Channel 20V 2.4A 1.25W Surface Mount SOT-23

Mfr. Part # : JY2301AX

Model Number : JY2301AX

Package : SOT-23

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Product Overview

These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordless telephones.

Product Attributes

  • Brand: JY Electronics (implied by www.jy-electronics.com.cn)
  • Origin: China (implied by www.jy-electronics.com.cn)
  • Package Type: SOT-23
  • Material: Copper leadframe
  • Certifications: None explicitly mentioned

Technical Specifications

ParameterSymbolTest ConditionLimitsUnit
P-Channel 20-V (D-S) MOSFET Maximum Ratings
Drain-Source VoltageVDS-20V
Gate-Source VoltageVGS12V
Continuous Drain CurrentIDTA=25oC-2.4A
Continuous Drain CurrentIDTA=70oC-2A
Pulsed Drain CurrentIDM-10A
Continuous Source Current (Diode Conduction)Is-1A
Power DissipationPDTA=25oC1.25W
Operation Junction and Storage Temperature RangeTJ, Tstg-55 to 150OC
Maximum Junction-to-Ambient Thermal ResistanceRJASurface Mounted on 1 x 1 FR4 Board.90oC/W
Electrical Characteristics
Static Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=-250uA-20V
Gate-Threshold VoltageVGS(th)VDS = VGS, ID = 250uA-0.5V
Gate-Body LeakageIGSSVDS = 0 V, VGS =12V100nA
Drain-Source Leakage CurrentIDSSVDS = -20 V, VGS = 0 V TJ = 25oC-1uA
Drain-Source Leakage CurrentIDSSVDS = -16 V, VGS = 0 V, TJ = 55oC-10uA
Drain-Source On-ResistanceRDS(on)VGS = -4.5 V, ID = -2.4 A150m
Drain-Source On-ResistanceRDS(on)VGS = -2.5 V, ID = -2.0 A170m
Diode Forward On VoltageVSDIS = -1.6 A, VGS = 0 V-1.5V
Total Gate ChargeQgVDS = -6V, VGS = -5V ID = -2.8A6.396nC
Gate-Source ChargeQgs2.24
Gate-Drain ChargeQg d1.05
Turn-On Delay Timetd(on)VDS=-15V, RD=15, RG = 6, VGS = -10V7.05ns
Turn-On Rise Timetr9.836
Turn-Off Delay Timetd(off)23.396
Turn-Off Fall Timetf7.692
Input CapacitanceCissVGS=0V,VDS=-6V,f =1.0MHz660.8pF
Output CapacitanceCoss110.4
Reverse Transfer CapacitanceCrss37.6

2405091034_JingYang-JY2301AX_C5380422.pdf


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