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N Channel Power MOSFET Jingdao Microelectronics F7N70L Designed for High Speed Switching Performance

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N Channel Power MOSFET Jingdao Microelectronics F7N70L Designed for High Speed Switching Performance

Drain to Source Voltage : 700V

Current - Continuous Drain(Id) : 7A

RDS(on) : 1.3Ω@10V

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 4V@250uA

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 3.5pF

Output Capacitance(Coss) : 27pF

Pd - Power Dissipation : 32W

Input Capacitance(Ciss) : 497pF

Gate Charge(Qg) : 18nC@10V

Description : N-Channel 700V 7A 32W Through Hole TO-220F-3

Mfr. Part # : F7N70L

Model Number : F7N70L

Package : TO-220F-3

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Product Overview

The F7N70 is a high voltage N-channel Power MOSFET from Jingdao Microelectronics, designed for high-speed switching applications. It features advanced trench MOSFET technology, offering fast switching times, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This makes it ideal for use in switching power supplies and adaptors.

Product Attributes

Brand: Jingdao Microelectronics co.LTD
Origin: Shandong, China
Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
Certifications: RoHS compliant

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Conditions
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage	VDSS	700	V
Gate-Source Voltage	VGSS	±30	V
Continuous Drain Current	ID	7	A	Tc=25
Pulsed Drain Current (Note 2)	IDM	28	A
Avalanche Energy Single Pulsed (Note 3)	EAS	32	mJ	L = 10mH, IAS = 7.5A, VDD = 50V, RG = 25 , Starting TJ = 25C
Power Dissipation	PD	281.3	W	Tc=25
Peak Diode Recovery dv/dt (Note 4)	dv/dt	4.5	V/ns	ISD ≤ 7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25C
Operation Junction Temperature and Storage Temperature	TJ, stg	-55 ~ +150	°C
THERMAL DATA
Junction to Ambient	RthJA	63	°C/W
Junction to Case	RthJC	2.99	°C/W
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage	BVDSS	700	V	VGS=0V, ID=0.25mA
Gate-Source Leakage Current	IGSS	±10	nA	VGS=±30V, VDS=0V
Drain-Source Leakage Current	IDSS	1.3	uA	VDS=700V, VGS=0V
ON CHARACTERISTICS
Gate Threshold Voltage	VGS(TH)	2.0	V	VDS=VGS, ID=0.25mA
Static Drain-Source On-State Resistance	RDS(ON)	1.3	Ω	VGS=10V, ID=3.5A
DYNAMIC CHARACTERISTICS
Input Capacitance	CISS	497	pF	VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance	COSS	100	pF	VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance	CRSS	18	pF	VDS=25V, VGS=0V, f=1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)	QG	317	nC	VDS=560V, VGS=10V, ID=7A, IG=1mA (NOTE1,2)
Gate-Drain Charge	QGD	3.9	nC	VDS=560V, VGS=10V, ID=7A, IG=1mA (NOTE1,2)
Gate-Source Charge	QGS	10	nC	VDS=560V, VGS=10V, ID=7A, IG=1mA (NOTE1,2)
Turn-On Delay Time (Note 1)	tD(ON)	53	ns	VDS=100V, VGS=10V, ID=7A, RG=25Ω (NOTE1,2)
Turn-On Rise Time	tR	28	ns	VDS=100V, VGS=10V, ID=7A, RG=25Ω (NOTE1,2)
Turn-Off Delay Time	tD(OFF)	26	ns	VDS=100V, VGS=10V, ID=7A, RG=25Ω (NOTE1,2)
Turn-Off Fall Time	tF	7	ns	VDS=100V, VGS=10V, ID=7A, RG=25Ω (NOTE1,2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Body-Diode Continuous Current	IS	7	A
Maximum Body-Diode Pulsed Current	ISM	28	A
Drain-Source Diode Forward Voltage (Note 1)	VSD	1.4	V	IS=7A, VGS=0V
Reverse Recovery Time (Note 1)	trr	317	ns	IS=7A, VGS=0V, di/dt=100A/us
Reverse Recovery Charge	Qrr	2.4	uC	IS=7A, VGS=0V, di/dt=100A/us

2206131630_Jingdao-Microelectronics-F7N70L_C2981743.pdf

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